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IRL510PBF

Public Made by Adom

by adom

Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRL510PBF

Vishay Intertech · MOSFETs · TO-220AB

IRL510PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage is rated at ±10 V, and the part is logic-level driven with RDS(on) specified at VGS = 4 V and 5 V.
2 D passive Drain of the N-channel MOSFET; rated 100 V drain-source with 5.6 A continuous drain current at VGS = 5 V and TC = 25 °C, and the junction-to-case thermal resistance is specified to the drain.
3 S passive Source of the N-channel MOSFET; the integral body diode is rated for 5.6 A continuous source-drain current.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 100 V 1
Gate-source voltage VGS -10 10 V 1
Continuous drain current ID 5.6 A VGS at 5 V, TC = 25 °C 1
Continuous drain current ID 4 A VGS at 5 V, TC = 100 °C 1
Pulsed drain current IDM 18 A 1
Single pulse avalanche energy EAS 100 mJ VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 Ω, IAS = 5.6 A 1
Repetitive avalanche current IAR 5.6 A 1
Repetitive avalanche energy EAR 4.3 mJ 1
Maximum power dissipation PD 43 W TC = 25 °C 1
Peak diode recovery dV/dt dV/dt 5.5 V/ns ISD ≤ 5.6 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C 1
Operating junction and storage temperature range TJ, Tstg -55 175 °C 1
Soldering recommendations (peak temperature) 300 °C For 10 s, 1.6 mm from case 1
Mounting torque 6-32 or M3 screw 10 lbf·in 1
Mounting torque 6-32 or M3 screw 1.1 N·m 1
Drain-source breakdown voltage VDS 100 V VGS = 0 V, ID = 250 μA 2
Gate-source threshold voltage VGS(th) 1 2 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS -100 100 nA VGS = ±10 V 2
Zero gate voltage drain current IDSS 25 μA VDS = 100 V, VGS = 0 V 2
Zero gate voltage drain current IDSS 250 μA VDS = 80 V, VGS = 0 V, TJ = 150 °C 2
Drain-source on-state resistance RDS(on) 0.54 Ω VGS = 5.0 V, ID = 3.4 A 2
Drain-source on-state resistance RDS(on) 0.76 Ω VGS = 4.0 V, ID = 2.8 A 2
Forward transconductance gfs 1.9 S VDS = 50 V, ID = 3.4 A 2
Total gate charge Qg 6.1 nC VGS = 5.0 V, ID = 5.6 A, VDS = 80 V, see fig. 6 and 13b 2
Gate-source charge Qgs 2.6 nC 2
Gate-drain charge Qgd 3.3 nC 2
Continuous source-drain diode current IS 5.6 A 2
Pulsed diode forward current ISM 18 A 2
Body diode voltage VSD 2.5 V TJ = 25 °C, IS = 5.6 A, VGS = 0 V 2
Body diode reverse recovery time trr 110 130 ns TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs 2
Body diode reverse recovery charge Qrr 0.5 0.65 μC 2
Maximum junction-to-ambient RthJA 62 °C/W 2
Maximum junction-to-case (drain) RthJC 3.5 °C/W 2
Case-to-sink, flat, greased surface RthCS 0.5 °C/W 2

CAD (KiCad official)

  • Symbol: IRL510PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irl510pbf-etched.step / irl510pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irl510pbf.step / irl510pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 38d7d67217741282, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF