component
IRFR7546TR
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRFR7546TR
UMW · MOSFETs · TO-252
IRFR7546TR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; the datasheet gives a gate-to-source voltage rating of ±20 V (VGS). |
| 2 | D | passive | DRAIN terminal; the device is rated for VDS = 60 V. |
| 3 | S | passive | SOURCE terminal, the return path for the gate and drain currents. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 60 | V | ID=250µA, VGS=0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 2.1 | 3.7 | V | VDS=VGS, ID=100μA | 3 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 6.6 | 7.9 | mΩ | VGS=10V, ID=43A | 3 | |
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=60V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 150 | µA | VDS=60V, VGS=0V, TJ=125°C | 3 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 3 | ||
| Forward Transconductance | gFS | 58 | S | VDS=25V, ID=43A | 3 | ||
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | 71 | A | TC=25°C | 1 | ||
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | 50 | A | TC=100°C | 1 | ||
| Continuous Drain Current, VGS @ 10V (Wire Bond Limited) | ID | 56 | A | TC=25°C | 1 | ||
| Pulsed Drain Current | IDM | 280 | A | TC=25°C | 1 | ||
| Maximum Power Dissipation | PD | 99 | W | TC=25°C | 1 | ||
| Linear Derating Factor | 0.66 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | 10 s, 1.6mm from case | 1 | |||
| Single Pulse Avalanche Energy (③) | EAS(Thermally limited) | 120 | mJ | L=130µH, RG=50Ω, IAS=43A, VGS=10V | 2 | ||
| Single Pulse Avalanche Energy (⑨) | EAS(Thermally limited) | 178 | mJ | L=1mH, RG=50Ω, IAS=19A, VGS=10V | 2 | ||
| Junction-to-Case | RθJC | 1.52 | °C/W | 2 | |||
| Junction-to-Ambient (PCB Mount) | RθJA | 50 | °C/W | 2 | |||
| Junction-to-Ambient | RθJA | 100 | °C/W | 2 | |||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | 56 | mV/°C | ID=1mA, Reference to 25°C | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 8.5 | mΩ | VGS=6V, ID=21A | 3 | ||
| Gate Resistance | Rg | 1.5 | Ω | 3 | |||
| Total Gate Charge | Qg | 47 | nC | ID=43A, VDS=30V, VGS=10V | 3 | ||
| Gate-to-Source Charge | Qgs | 14 | nC | ID=43A, VDS=30V, VGS=10V | 3 | ||
| Gate-to-Drain (Miller) Charge | Qgd | 18 | nC | ID=43A, VDS=30V, VGS=10V | 3 | ||
| Total Gate Charge Sync. (Qg-Qgd) | Qsync | 26 | nC | ID=43A, VDS=30V, VGS=10V | 3 | ||
| Turn-On Delay Time | tD(on) | 8.1 | ns | VDD=30V, ID=43A, RG=2.7Ω, VGS=10V | 3 | ||
| Rise Time | tr | 28 | ns | VDD=30V, ID=43A, RG=2.7Ω, VGS=10V | 3 | ||
| Turn-Off Delay Time | tD(off) | 36 | ns | VDD=30V, ID=43A, RG=2.7Ω, VGS=10V | 3 | ||
| Fall Time | tf | 20 | ns | VDD=30V, ID=43A, RG=2.7Ω, VGS=10V | 3 | ||
| Input Capacitance | Ciss | 3020 | pF | VGS=0V, VDS=25V, ƒ=1MHz | 3 | ||
| Output Capacitance | Coss | 280 | pF | VGS=0V, VDS=25V, ƒ=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 180 | pF | VGS=0V, VDS=25V, ƒ=1MHz | 3 | ||
| Effective Output Capacitance (Energy Related) | Cosseff.(ER) | 290 | pF | VGS=0V, VDS=0V to 48V ⑦ | 3 | ||
| Effective Output Capacitance (Time Related) | Cosseff.(TR) | 370 | pF | VGS=0V, VDS=0V to 48V ⑥ | 3 |
CAD (KiCad official)
- Symbol:
IRFR7546TR - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
irfr7546tr-etched.step/irfr7546tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfr7546tr.step/irfr7546tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (13 pp, sha256
4d538d0e53d7f42a, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFR7546TR
**UMW** · MOSFETs · TO-252
IRFR7546TR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; the datasheet gives a gate-to-source voltage rating of ±20 V (VGS). |
| 2 | D | passive | DRAIN terminal; the device is rated for VDS = 60 V. |
| 3 | S | passive | SOURCE terminal, the return path for the gate and drain currents. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | ID=250µA, VGS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | 2.1 | | 3.7 | V | VDS=VGS, ID=100μA | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | 6.6 | 7.9 | mΩ | VGS=10V, ID=43A | 3 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | µA | VDS=60V, VGS=0V | 3 |
| Drain-to-Source Leakage Current | IDSS | | | 150 | µA | VDS=60V, VGS=0V, TJ=125°C | 3 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS=20V | 3 |
| Gate-to-Source Reverse Leakage | IGSS | -100 | | | nA | VGS=-20V | 3 |
| Forward Transconductance | gFS | 58 | | | S | VDS=25V, ID=43A | 3 |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | | | 71 | A | TC=25°C | 1 |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | | | 50 | A | TC=100°C | 1 |
| Continuous Drain Current, VGS @ 10V (Wire Bond Limited) | ID | | | 56 | A | TC=25°C | 1 |
| Pulsed Drain Current | IDM | | | 280 | A | TC=25°C | 1 |
| Maximum Power Dissipation | PD | | | 99 | W | TC=25°C | 1 |
| Linear Derating Factor | | | | 0.66 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |
| Soldering Temperature | | | | 300 | °C | 10 s, 1.6mm from case | 1 |
| Single Pulse Avalanche Energy (③) | EAS(Thermally limited) | | | 120 | mJ | L=130µH, RG=50Ω, IAS=43A, VGS=10V | 2 |
| Single Pulse Avalanche Energy (⑨) | EAS(Thermally limited) | | | 178 | mJ | L=1mH, RG=50Ω, IAS=19A, VGS=10V | 2 |
| Junction-to-Case | RθJC | | 1.52 | | °C/W | | 2 |
| Junction-to-Ambient (PCB Mount) | RθJA | | 50 | | °C/W | | 2 |
| Junction-to-Ambient | RθJA | | 100 | | °C/W | | 2 |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | | 56 | | mV/°C | ID=1mA, Reference to 25°C | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | 8.5 | | mΩ | VGS=6V, ID=21A | 3 |
| Gate Resistance | Rg | | 1.5 | | Ω | | 3 |
| Total Gate Charge | Qg | | 47 | | nC | ID=43A, VDS=30V, VGS=10V | 3 |
| Gate-to-Source Charge | Qgs | | 14 | | nC | ID=43A, VDS=30V, VGS=10V | 3 |
| Gate-to-Drain (Miller) Charge | Qgd | | 18 | | nC | ID=43A, VDS=30V, VGS=10V | 3 |
| Total Gate Charge Sync. (Qg-Qgd) | Qsync | | 26 | | nC | ID=43A, VDS=30V, VGS=10V | 3 |
| Turn-On Delay Time | tD(on) | | 8.1 | | ns | VDD=30V, ID=43A, RG=2.7Ω, VGS=10V | 3 |
| Rise Time | tr | | 28 | | ns | VDD=30V, ID=43A, RG=2.7Ω, VGS=10V | 3 |
| Turn-Off Delay Time | tD(off) | | 36 | | ns | VDD=30V, ID=43A, RG=2.7Ω, VGS=10V | 3 |
| Fall Time | tf | | 20 | | ns | VDD=30V, ID=43A, RG=2.7Ω, VGS=10V | 3 |
| Input Capacitance | Ciss | | 3020 | | pF | VGS=0V, VDS=25V, ƒ=1MHz | 3 |
| Output Capacitance | Coss | | 280 | | pF | VGS=0V, VDS=25V, ƒ=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 180 | | pF | VGS=0V, VDS=25V, ƒ=1MHz | 3 |
| Effective Output Capacitance (Energy Related) | Cosseff.(ER) | | 290 | | pF | VGS=0V, VDS=0V to 48V ⑦ | 3 |
| Effective Output Capacitance (Time Related) | Cosseff.(TR) | | 370 | | pF | VGS=0V, VDS=0V to 48V ⑥ | 3 |
## CAD (KiCad official)
- Symbol: `IRFR7546TR`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `irfr7546tr-etched.step` / `irfr7546tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfr7546tr.step` / `irfr7546tr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755878933751844864) (13 pp, sha256 `4d538d0e53d7f42a`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfr7546tr-datasheet.pdf)