main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 23d ago
viewers irfr3806tr: viewers · Ray 23d ago
irfr3806tr-etched.glb Publish 0.1.0 · Ray 23d ago
irfr3806tr-etched.step irfr3806tr: factory component page (tier=lcsc) · Ray 23d ago
irfr3806tr-hero.glb irfr3806tr: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
irfr3806tr-hero.overlay.json Publish 0.1.0 · Ray 23d ago
irfr3806tr.glb Publish 0.1.0 · Ray 23d ago
irfr3806tr.kicad_mod Publish 0.1.0 · Ray 23d ago
irfr3806tr.kicad_sym Publish 0.1.0 · Ray 23d ago
irfr3806tr.lbr Publish 0.1.0 · Ray 23d ago
irfr3806tr.step Publish 0.1.0 · Ray 23d ago
package.json Publish 0.1.0 · Ray 23d ago
page.json Set visibility: public · Ray 23d ago
README.md Publish 0.1.0 · Ray 23d ago

IRFR3806TR

UMW · MOSFETs · TO-252

IRFR3806TR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the N-channel MOSFET; the datasheet gives a gate-to-source voltage rating of ±20 V.
2 D passive DRAIN terminal, which is also the tab of the TO-252 package; the datasheet gives a 60 V drain-to-source rating and 43 A continuous drain current at TC=25°C (VGS=10V).
3 S passive SOURCE terminal of the MOSFET; the integral body diode is connected between source and drain.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 60 V ID=250µA, VGS=0V 3
Static Drain-to-Source On-Resistance RDS(ON) 12.6 15.8 mΩ VGS=10V, ID=25A ④ 3
Drain-to-Source Leakage Current (TJ=125°C) IDSS 250 µA VDS=48V, VGS=0V, TJ=125°C 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Continuous Drain Current ID 43 A TC=25°C 1
Continuous Drain Current ID 31 A TC=100°C 1
Pulsed Drain Current IDM 170 A 1
Maximum Power Dissipation PD 71 W 1
Linear Derating Factor 0.47 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Peak Diode Recovery dv/dt 24 V/ns 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Soldering Temperature 300 °C 10 s, 1.6mm from case 1
Junction-to-Case RθJC 2.12 °C/W 2
Junction-to-Ambient RθJA 62 °C/W 2
Case-to-Sink RθCS 0.5 °C/W Flat, greased surface 2

CAD (KiCad official)

  • Symbol: IRFR3806TR
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: irfr3806tr-etched.step / irfr3806tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr3806tr.step / irfr3806tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (12 pp, sha256 55d9c477bbf64541, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF