# IRFR3709ZTR

**UMW** · MOSFETs · TO-252

IRFR3709ZTR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limited to ±20V with a gate threshold of 1.35V min to 2.25V max at ID=250µA. |
| 2 | D | passive | Drain; drain-source voltage rated 30V with continuous drain current of 86A at TC=25°C (package limited to 30A) and pulsed drain current of 340A. |
| 3 | S | passive | Source; continuous body-diode source current is 86A and pulsed source current is 340A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 86 | A | VGS=10V, TC=25°C | 1 |
| Continuous Drain Current | ID |  |  | 61 | A | VGS=10V, TC=100°C | 1 |
| Pulsed Drain Current | IDM |  |  | 340 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 79 | W | TC=25°C | 1 |
| Maximum Power Dissipation | PD |  |  | 39 | W | TC=100°C | 1 |
| Linear Derating Factor |  |  |  | 0.53 | W/°C |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 175 | °C |  | 1 |
| Soldering Temperature |  |  |  | 300 | °C | for 10 seconds (1.6mm from case) | 1 |
| Junction-to-Ambient (PCB Mount) | RθJA |  |  | 50 | °C/W | PCB mount | 2 |
| Junction-to-Ambient | RθJA |  |  | 110 | °C/W |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | ID=250µA, VGS=0V | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  | 5.2 | 6.5 | mΩ | VGS=10V, ID=15A | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  | 6.5 | 8.2 | mΩ | VGS=4.5V, ID=12A | 3 |
| Gate Threshold Voltage | VGS(th) | 1.35 | 1.8 | 2.25 | V | VDS=VGS, ID=250μA | 3 |
| Drain-to-Source Leakage Current | IDSS |  |  | 1 | µA | VDS=24V, VGS=0V | 3 |
| Drain-to-Source Leakage Current | IDSS |  |  | 150 | µA | VDS=24V, VGS=0V, TJ=125°C | 3 |
| Gate-to-Source Forward Leakage | IGSS |  |  | 100 | nA | VGS=20V | 3 |
| Gate-to-Source Reverse Leakage | IGSS | -100 |  |  | nA | VGS=-20V | 3 |
| Forward Transconductance | gFS | 51 |  |  | S | VDS=15V, ID=12A | 3 |
| Total Gate Charge | Qg |  | 17 | 26 | nC | VDS=15V, VGS=4.5V, ID=12A | 3 |
| Single Pulse Avalanche Energy | EAS |  |  | 100 | mJ | TJ=25°C, L=1.4mH, RG=25Ω, IAS=12A | 4 |
| Avalanche Current | IAR |  |  | 12 | A |  | 4 |
| Repetitive Avalanche Energy | EAR |  |  | 7.9 | mJ |  | 4 |
| Continuous Source Current (Body Diode) | IS |  |  | 86 | A |  | 4 |
| Pulsed Source Current (Body Diode) | ISM |  |  | 340 | A |  | 4 |
| Diode Forward Voltage | VSD |  |  | 1 | V | TJ=25°C, IS=12A, VGS=0V | 4 |
| Reverse Recovery Time | trr |  | 25 | 37 | ns | TJ=25°C, IF=12A, VDS=15V, dI/dt=100A/μs | 4 |
| Reverse Recovery Charge | Qrr |  | 29 | 44 | nC | TJ=25°C, IF=12A, VDS=15V, dI/dt=100A/μs | 4 |
| Junction-to-Case | RθJC |  | 1.9 |  | °C/W |  | 2 |
| Breakdown Voltage Temp. Coefficient | ΔBVDSS/ΔTJ |  | 22 |  | mV/°C | ID=1mA, Reference to 25°C | 3 |
| Gate Threshold Voltage Coefficient | ΔVGS(th)/ΔTJ |  | -5.6 |  | mV/°C |  | 3 |
| Pre-Vth Gate-to-Source Charge | Qgs1 |  | 4.7 |  | nC | VDS=15V, VGS=4.5V, ID=12A | 3 |
| Post-Vth Gate-to-Source Charge | Qgs2 |  | 1.6 |  | nC | VDS=15V, VGS=4.5V, ID=12A | 3 |
| Gate-to-Drain Charge | Qgd |  | 5.7 |  | nC | VDS=15V, VGS=4.5V, ID=12A | 3 |
| Gate Charge Overdrive | Qgodr |  | 5 |  | nC |  | 3 |
| Switch Charge (Qgs2 + Qgd) | Qsw |  | 7.3 |  | nC |  | 3 |
| Output Charge | Qoss |  | 10 |  | nC | VDS=16V, VGS=0V | 3 |
| Turn-On Delay Time | tD(on) |  | 12 |  | ns | VDD=16V, VGS=4.5V, ID=12A, Clamped Inductive Load | 3 |
| Rise Time | tr |  | 12 |  | ns | VDD=16V, VGS=4.5V, ID=12A, Clamped Inductive Load | 3 |
| Turn-Off Delay Time | tD(off) |  | 15 |  | ns | VDD=16V, VGS=4.5V, ID=12A, Clamped Inductive Load | 3 |
| Fall Time | tf |  | 3.9 |  | ns | VDD=16V, VGS=4.5V, ID=12A, Clamped Inductive Load | 3 |
| Input Capacitance | Ciss |  | 2330 |  | pF | VGS=0V, VDS=15V, f=1.0MHz | 3 |
| Output Capacitance | Coss |  | 460 |  | pF | VGS=0V, VDS=15V, f=1.0MHz | 3 |
| Reverse Transfer Capacitance | Crss |  | 230 |  | pF | VGS=0V, VDS=15V, f=1.0MHz | 3 |

## CAD (KiCad official)

- Symbol: `IRFR3709ZTR`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `irfr3709ztr-etched.step` / `irfr3709ztr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfr3709ztr.step` / `irfr3709ztr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](docs/irfr3709ztr-datasheet.pdf) (12 pp, sha256 `168c0167166994d7`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irfr3709ztr-datasheet.pdf)