component
IRFR3709ZTR
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRFR3709ZTR
UMW · MOSFETs · TO-252
IRFR3709ZTR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limited to ±20V with a gate threshold of 1.35V min to 2.25V max at ID=250µA. |
| 2 | D | passive | Drain; drain-source voltage rated 30V with continuous drain current of 86A at TC=25°C (package limited to 30A) and pulsed drain current of 340A. |
| 3 | S | passive | Source; continuous body-diode source current is 86A and pulsed source current is 340A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 86 | A | VGS=10V, TC=25°C | 1 | ||
| Continuous Drain Current | ID | 61 | A | VGS=10V, TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 340 | A | 1 | |||
| Maximum Power Dissipation | PD | 79 | W | TC=25°C | 1 | ||
| Maximum Power Dissipation | PD | 39 | W | TC=100°C | 1 | ||
| Linear Derating Factor | 0.53 | W/°C | 1 | ||||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | for 10 seconds (1.6mm from case) | 1 | |||
| Junction-to-Ambient (PCB Mount) | RθJA | 50 | °C/W | PCB mount | 2 | ||
| Junction-to-Ambient | RθJA | 110 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 5.2 | 6.5 | mΩ | VGS=10V, ID=15A | 3 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 6.5 | 8.2 | mΩ | VGS=4.5V, ID=12A | 3 | |
| Gate Threshold Voltage | VGS(th) | 1.35 | 1.8 | 2.25 | V | VDS=VGS, ID=250μA | 3 |
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=24V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 150 | µA | VDS=24V, VGS=0V, TJ=125°C | 3 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 3 | ||
| Forward Transconductance | gFS | 51 | S | VDS=15V, ID=12A | 3 | ||
| Total Gate Charge | Qg | 17 | 26 | nC | VDS=15V, VGS=4.5V, ID=12A | 3 | |
| Single Pulse Avalanche Energy | EAS | 100 | mJ | TJ=25°C, L=1.4mH, RG=25Ω, IAS=12A | 4 | ||
| Avalanche Current | IAR | 12 | A | 4 | |||
| Repetitive Avalanche Energy | EAR | 7.9 | mJ | 4 | |||
| Continuous Source Current (Body Diode) | IS | 86 | A | 4 | |||
| Pulsed Source Current (Body Diode) | ISM | 340 | A | 4 | |||
| Diode Forward Voltage | VSD | 1 | V | TJ=25°C, IS=12A, VGS=0V | 4 | ||
| Reverse Recovery Time | trr | 25 | 37 | ns | TJ=25°C, IF=12A, VDS=15V, dI/dt=100A/μs | 4 | |
| Reverse Recovery Charge | Qrr | 29 | 44 | nC | TJ=25°C, IF=12A, VDS=15V, dI/dt=100A/μs | 4 | |
| Junction-to-Case | RθJC | 1.9 | °C/W | 2 | |||
| Breakdown Voltage Temp. Coefficient | ΔBVDSS/ΔTJ | 22 | mV/°C | ID=1mA, Reference to 25°C | 3 | ||
| Gate Threshold Voltage Coefficient | ΔVGS(th)/ΔTJ | -5.6 | mV/°C | 3 | |||
| Pre-Vth Gate-to-Source Charge | Qgs1 | 4.7 | nC | VDS=15V, VGS=4.5V, ID=12A | 3 | ||
| Post-Vth Gate-to-Source Charge | Qgs2 | 1.6 | nC | VDS=15V, VGS=4.5V, ID=12A | 3 | ||
| Gate-to-Drain Charge | Qgd | 5.7 | nC | VDS=15V, VGS=4.5V, ID=12A | 3 | ||
| Gate Charge Overdrive | Qgodr | 5 | nC | 3 | |||
| Switch Charge (Qgs2 + Qgd) | Qsw | 7.3 | nC | 3 | |||
| Output Charge | Qoss | 10 | nC | VDS=16V, VGS=0V | 3 | ||
| Turn-On Delay Time | tD(on) | 12 | ns | VDD=16V, VGS=4.5V, ID=12A, Clamped Inductive Load | 3 | ||
| Rise Time | tr | 12 | ns | VDD=16V, VGS=4.5V, ID=12A, Clamped Inductive Load | 3 | ||
| Turn-Off Delay Time | tD(off) | 15 | ns | VDD=16V, VGS=4.5V, ID=12A, Clamped Inductive Load | 3 | ||
| Fall Time | tf | 3.9 | ns | VDD=16V, VGS=4.5V, ID=12A, Clamped Inductive Load | 3 | ||
| Input Capacitance | Ciss | 2330 | pF | VGS=0V, VDS=15V, f=1.0MHz | 3 | ||
| Output Capacitance | Coss | 460 | pF | VGS=0V, VDS=15V, f=1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 230 | pF | VGS=0V, VDS=15V, f=1.0MHz | 3 |
CAD (KiCad official)
- Symbol:
IRFR3709ZTR - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
irfr3709ztr-etched.step/irfr3709ztr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfr3709ztr.step/irfr3709ztr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (12 pp, sha256
168c0167166994d7, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).