# IRFR220N

**MSKSEMI** · MOSFETs · TO-252

IRFR220N from MSKSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the MOSFET with VGS rated ±20 V and threshold of 1 V min to 2.5 V max at 250 µA. |
| 2 | D | passive | Drain; VDS rated 200 V with continuous drain current of 8 A (5.6 A at TC=100°C) and pulsed IDM of 20 A. |
| 3 | S | passive | Source; connects to the body diode anode, with diode forward current IS of 8 A maximum. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 200 | V |  | 2 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 2 |
| Drain Current-Continuous | ID |  |  | 8 | A | TC=25℃ | 2 |
| Drain Current-Continuous | ID (100℃) |  |  | 5.6 | A | TC=100℃ | 2 |
| Pulsed Drain Current | IDM |  |  | 20 | A |  | 2 |
| Maximum Power Dissipation | PD |  |  | 55 | W |  | 2 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 2 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 2.3 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 2 |
| Drain-Source Breakdown Voltage |  | 200 | 215 |  | V | VGS=0V, ID=250μA | 3 |
| Zero Gate Voltage Drain Current |  |  |  | 1 | μA | VDS=200V, VGS=0V | 3 |
| Gate-Body Leakage Current |  | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Gate Threshold Voltage |  | 1 | 1.7 | 2.5 | V | VDS=VGS, ID=250μA | 3 |
| Drain-Source On-State Resistance | RDS(on) |  | 260 | 300 | mΩ | VGS=10V, ID=4.5A | 3 |
| Forward Transconductance |  | 3 |  |  | S | VDS=25V, ID=4.5A | 3 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=8A | 3 |
| Diode Forward Current | IS |  |  | 8 | A | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 3 |

## CAD (KiCad official)

- Symbol: `IRFR220N`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `irfr220n-etched.step` / `irfr220n-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfr220n.step` / `irfr220n.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590922992333365248) (8 pp, sha256 `e072a57dcfdc4aab`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irfr220n-datasheet.pdf)