main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 23d ago
viewers irfr220n: viewers · Ray 23d ago
irfr220n-etched.glb Publish 0.1.0 · Ray 23d ago
irfr220n-etched.step irfr220n: factory component page (tier=lcsc) · Ray 23d ago
irfr220n-hero.glb irfr220n: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
irfr220n-hero.overlay.json Publish 0.1.0 · Ray 23d ago
irfr220n.glb Publish 0.1.0 · Ray 23d ago
irfr220n.kicad_mod Publish 0.1.0 · Ray 23d ago
irfr220n.kicad_sym Publish 0.1.0 · Ray 23d ago
irfr220n.lbr Publish 0.1.0 · Ray 23d ago
irfr220n.step Publish 0.1.0 · Ray 23d ago
package.json Publish 0.1.0 · Ray 23d ago
page.json Set visibility: public · Ray 23d ago
README.md Publish 0.1.0 · Ray 23d ago

IRFR220N

MSKSEMI · MOSFETs · TO-252

IRFR220N from MSKSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the MOSFET with VGS rated ±20 V and threshold of 1 V min to 2.5 V max at 250 µA.
2 D passive Drain; VDS rated 200 V with continuous drain current of 8 A (5.6 A at TC=100°C) and pulsed IDM of 20 A.
3 S passive Source; connects to the body diode anode, with diode forward current IS of 8 A maximum.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 200 V 2
Gate-Source Voltage VGS -20 20 V 2
Drain Current-Continuous ID 8 A TC=25℃ 2
Drain Current-Continuous ID (100℃) 5.6 A TC=100℃ 2
Pulsed Drain Current IDM 20 A 2
Maximum Power Dissipation PD 55 W 2
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 2
Thermal Resistance, Junction-to-Case RθJC 2.3 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 2
Drain-Source Breakdown Voltage 200 215 V VGS=0V, ID=250μA 3
Zero Gate Voltage Drain Current 1 μA VDS=200V, VGS=0V 3
Gate-Body Leakage Current -100 100 nA VGS=±20V, VDS=0V 3
Gate Threshold Voltage 1 1.7 2.5 V VDS=VGS, ID=250μA 3
Drain-Source On-State Resistance RDS(on) 260 300 mΩ VGS=10V, ID=4.5A 3
Forward Transconductance 3 S VDS=25V, ID=4.5A 3
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=8A 3
Diode Forward Current IS 8 A Note 2: surface mounted on FR4 board, t ≤ 10 sec 3

CAD (KiCad official)

  • Symbol: IRFR220N
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: irfr220n-etched.step / irfr220n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr220n.step / irfr220n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (8 pp, sha256 e072a57dcfdc4aab, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF