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IRFR120NTRPBF-HXY

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HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFR120NTRPBF-HXY

HXY MOSFET · MOSFETs · TO-252-2L

IRFR120NTRPBF-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate pin of the N-channel SGT MOSFET, with gate-source voltage limited to ±20 V.
2 D passive Drain pin (PIN2, also the tab of the TO-252-2L package), rated for VDS 100 V and continuous drain current 12 A.
3 S passive Source pin of the N-channel MOSFET, the return for drain current up to 12 A continuous.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 110 V VGS = 0V, ID = 250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 100V, VGS = 0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Gate Threshold Voltage VGS(th) 1 1.8 3 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(on) 95 120 mΩ VGS = 10V, ID = 3A 2
Maximum Continuous Drain to Source Diode Forward Current IS 4.5 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 12 A 2
Drain to Source Diode Forward Voltage VSD 1.3 V VGS = 0V, IS =3A 2
Drain source voltage VDS 100 V Tj=25℃ 1
Gate source voltage VGS -20 20 V Tj=25℃ 1
Continuous drain current ID 12 A Tj=25℃ 1
Pulsed drain current ID, pulse 24 A Tj=25℃ 1
Power dissipation PD 17 W Tj=25℃ 1
Single pulsed avalanche energy EAS 1.2 mJ Tj=25℃ 1
Operation and storage temperature Tstg, Tj -55 150 ℃ 1
Thermal resistance, junction-case RθJC 6.6 °C/W 1
Thermal resistance, junction-ambient RθJA 62 °C/W 1
Input Capacitance Ciss 196 pF VDS = 50V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 25.9 pF VDS = 50V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 21.4 pF VDS = 50V, VGS = 0V, f = 1.0MHz 2
Total Gate Charge Qg 4.3 nC VDS = 50V, ID = 3A, VGS = 10V 2
Gate-Source Charge Qgs 3.5 nC VDS = 50V, ID = 3A, VGS = 10V 2
Gate-Drain Charge Qgd 3.1 nC VDS = 50V, ID = 3A, VGS = 10V 2
Turn-On Delay Time td(on) 14.7 ns VDD = 50V, IDS=3A, RG = 2Ω, VGEN = 10V 2
Turn-On Rise Time tr 3.5 ns VDD = 50V, IDS=3A, RG = 2Ω, VGEN = 10V 2
Turn-Off Delay Time td(off) 20.9 ns VDD = 50V, IDS=3A, RG = 2Ω, VGEN = 10V 2
Turn-Off Fall Time tf 2.7 ns VDD = 50V, IDS=3A, RG = 2Ω, VGEN = 10V 2
Body Diode Reverse Recovery Time trr 32.1 ns VGS = 0V, IF = 3A, di/dt =100A/μs 2
Body Diode Reverse Recovery Charge Qrr 39.4 nC VGS = 0V, IF = 3A, di/dt =100A/μs 2
Peak Reverse Recovery Current Irrm 2.1 A VGS = 0V, IF = 3A, di/dt =100A/μs 2

CAD (KiCad official)

  • Symbol: IRFR120NTRPBF-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: irfr120ntrpbf-hxy-etched.step / irfr120ntrpbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr120ntrpbf-hxy.step / irfr120ntrpbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 b31d45eda54e0d07, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF