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IRFR120NTRPBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRFR120NTRPBF-HXY
HXY MOSFET · MOSFETs · TO-252-2L
IRFR120NTRPBF-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin of the N-channel SGT MOSFET, with gate-source voltage limited to ±20 V. |
| 2 | D | passive | Drain pin (PIN2, also the tab of the TO-252-2L package), rated for VDS 100 V and continuous drain current 12 A. |
| 3 | S | passive | Source pin of the N-channel MOSFET, the return for drain current up to 12 A continuous. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | 110 | V | VGS = 0V, ID = 250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 100V, VGS = 0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 3 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 95 | 120 | mΩ | VGS = 10V, ID = 3A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 4.5 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 12 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.3 | V | VGS = 0V, IS =3A | 2 | ||
| Drain source voltage | VDS | 100 | V | Tj=25℃ | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | Tj=25℃ | 1 | |
| Continuous drain current | ID | 12 | A | Tj=25℃ | 1 | ||
| Pulsed drain current | ID, pulse | 24 | A | Tj=25℃ | 1 | ||
| Power dissipation | PD | 17 | W | Tj=25℃ | 1 | ||
| Single pulsed avalanche energy | EAS | 1.2 | mJ | Tj=25℃ | 1 | ||
| Operation and storage temperature | Tstg, Tj | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction-case | RθJC | 6.6 | °C/W | 1 | |||
| Thermal resistance, junction-ambient | RθJA | 62 | °C/W | 1 | |||
| Input Capacitance | Ciss | 196 | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 25.9 | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 21.4 | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 4.3 | nC | VDS = 50V, ID = 3A, VGS = 10V | 2 | ||
| Gate-Source Charge | Qgs | 3.5 | nC | VDS = 50V, ID = 3A, VGS = 10V | 2 | ||
| Gate-Drain Charge | Qgd | 3.1 | nC | VDS = 50V, ID = 3A, VGS = 10V | 2 | ||
| Turn-On Delay Time | td(on) | 14.7 | ns | VDD = 50V, IDS=3A, RG = 2Ω, VGEN = 10V | 2 | ||
| Turn-On Rise Time | tr | 3.5 | ns | VDD = 50V, IDS=3A, RG = 2Ω, VGEN = 10V | 2 | ||
| Turn-Off Delay Time | td(off) | 20.9 | ns | VDD = 50V, IDS=3A, RG = 2Ω, VGEN = 10V | 2 | ||
| Turn-Off Fall Time | tf | 2.7 | ns | VDD = 50V, IDS=3A, RG = 2Ω, VGEN = 10V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 32.1 | ns | VGS = 0V, IF = 3A, di/dt =100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 39.4 | nC | VGS = 0V, IF = 3A, di/dt =100A/μs | 2 | ||
| Peak Reverse Recovery Current | Irrm | 2.1 | A | VGS = 0V, IF = 3A, di/dt =100A/μs | 2 |
CAD (KiCad official)
- Symbol:
IRFR120NTRPBF-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
irfr120ntrpbf-hxy-etched.step/irfr120ntrpbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfr120ntrpbf-hxy.step/irfr120ntrpbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
b31d45eda54e0d07, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).