component
IRFR1018ETR
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRFR1018ETR
UMW · MOSFETs · TO-252
IRFR1018ETR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; the datasheet rates the gate-to-source voltage VGS at ±20 V. |
| 2 | D | passive | DRAIN terminal; the datasheet rates the continuous drain current at 79 A (TC=25°C, silicon limited) and 56 A (TC=25°C, wire bond limited). |
| 3 | S | passive | SOURCE terminal; the datasheet rates the continuous body-diode source current IS at 79 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 60 | V | ID=250µA, VGS=0V | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 7.1 | 8.4 | mΩ | VGS=10V, ID=47A ⑤ | 3 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=100μA | 3 | |
| Drain-to-Source Leakage Current | IDSS | 20 | 250 | µA | VDS=60V, VGS=0V | 3 | |
| Drain-to-Source Leakage Current | IDSS | 100 | µA | VDS=48V, VGS=0V, TJ=125°C | 3 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 3 | ||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | 0.073 | V/°C | Reference to 25°C, ID=5mA② | 3 | ||
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | 79 | A | TC=25°C | 1 | ||
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | 56 | A | TC=100°C | 1 | ||
| Continuous Drain Current, VGS @ 10V (Wire Bond Limited) | ID | 56 | A | TC=25°C | 1 | ||
| Pulsed Drain Current | IDM | 315 | A | TC=25°C | 1 | ||
| Maximum Power Dissipation | PD | 110 | W | TC=25°C | 1 | ||
| Linear Derating Factor | 0.76 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Peak Diode Recovery | dv/dt | 21 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature, for 10 seconds (1.6mm from case) | 300 | °C | 10 seconds (1.6mm from case) | 1 | |||
| Single Pulse Avalanche Energy | EAS | 88 | mJ | Thermally limited ③ | 2 | ||
| Avalanche Current | IAR | 47 | A | 2 | |||
| Repetitive Avalanche Energy | EAR | 11 | mJ | 2 | |||
| Junction-to-Case | RθJC | 1.32 | °C/W | 2 | |||
| Junction-to-Ambient (PCB Mount) | RθJA | 50 | °C/W | PCB mount ⑧⑨ | 2 | ||
| Junction-to-Ambient | RθJA | 110 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
IRFR1018ETR - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
irfr1018etr-etched.step/irfr1018etr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfr1018etr.step/irfr1018etr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (11 pp, sha256
18da011dc7877652, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFR1018ETR
**UMW** · MOSFETs · TO-252
IRFR1018ETR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; the datasheet rates the gate-to-source voltage VGS at ±20 V. |
| 2 | D | passive | DRAIN terminal; the datasheet rates the continuous drain current at 79 A (TC=25°C, silicon limited) and 56 A (TC=25°C, wire bond limited). |
| 3 | S | passive | SOURCE terminal; the datasheet rates the continuous body-diode source current IS at 79 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | ID=250µA, VGS=0V | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | 7.1 | 8.4 | mΩ | VGS=10V, ID=47A ⑤ | 3 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS=VGS, ID=100μA | 3 |
| Drain-to-Source Leakage Current | IDSS | | 20 | 250 | µA | VDS=60V, VGS=0V | 3 |
| Drain-to-Source Leakage Current | IDSS | | | 100 | µA | VDS=48V, VGS=0V, TJ=125°C | 3 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS=20V | 3 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS=-20V | 3 |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | | 0.073 | | V/°C | Reference to 25°C, ID=5mA② | 3 |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | | | 79 | A | TC=25°C | 1 |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | | | 56 | A | TC=100°C | 1 |
| Continuous Drain Current, VGS @ 10V (Wire Bond Limited) | ID | | | 56 | A | TC=25°C | 1 |
| Pulsed Drain Current | IDM | | | 315 | A | TC=25°C | 1 |
| Maximum Power Dissipation | PD | | | 110 | W | TC=25°C | 1 |
| Linear Derating Factor | | | | 0.76 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Peak Diode Recovery | dv/dt | | | 21 | V/ns | | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |
| Soldering Temperature, for 10 seconds (1.6mm from case) | | | | 300 | °C | 10 seconds (1.6mm from case) | 1 |
| Single Pulse Avalanche Energy | EAS | | | 88 | mJ | Thermally limited ③ | 2 |
| Avalanche Current | IAR | | | 47 | A | | 2 |
| Repetitive Avalanche Energy | EAR | | | 11 | mJ | | 2 |
| Junction-to-Case | RθJC | | | 1.32 | °C/W | | 2 |
| Junction-to-Ambient (PCB Mount) | RθJA | | | 50 | °C/W | PCB mount ⑧⑨ | 2 |
| Junction-to-Ambient | RθJA | | | 110 | °C/W | | 2 |
## CAD (KiCad official)
- Symbol: `IRFR1018ETR`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `irfr1018etr-etched.step` / `irfr1018etr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfr1018etr.step` / `irfr1018etr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755878248737710080) (11 pp, sha256 `18da011dc7877652`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfr1018etr-datasheet.pdf)