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IRFR1018ETR

Public Made by Adom

by adom

UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFR1018ETR

UMW · MOSFETs · TO-252

IRFR1018ETR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal; the datasheet rates the gate-to-source voltage VGS at ±20 V.
2 D passive DRAIN terminal; the datasheet rates the continuous drain current at 79 A (TC=25°C, silicon limited) and 56 A (TC=25°C, wire bond limited).
3 S passive SOURCE terminal; the datasheet rates the continuous body-diode source current IS at 79 A.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 60 V ID=250µA, VGS=0V 3
Static Drain-to-Source On-Resistance RDS(ON) 7.1 8.4 mΩ VGS=10V, ID=47A ⑤ 3
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=100μA 3
Drain-to-Source Leakage Current IDSS 20 250 µA VDS=60V, VGS=0V 3
Drain-to-Source Leakage Current IDSS 100 µA VDS=48V, VGS=0V, TJ=125°C 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/ΔTJ 0.073 V/°C Reference to 25°C, ID=5mA② 3
Continuous Drain Current, VGS @ 10V (Silicon Limited) ID 79 A TC=25°C 1
Continuous Drain Current, VGS @ 10V (Silicon Limited) ID 56 A TC=100°C 1
Continuous Drain Current, VGS @ 10V (Wire Bond Limited) ID 56 A TC=25°C 1
Pulsed Drain Current IDM 315 A TC=25°C 1
Maximum Power Dissipation PD 110 W TC=25°C 1
Linear Derating Factor 0.76 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Peak Diode Recovery dv/dt 21 V/ns 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Soldering Temperature, for 10 seconds (1.6mm from case) 300 °C 10 seconds (1.6mm from case) 1
Single Pulse Avalanche Energy EAS 88 mJ Thermally limited ③ 2
Avalanche Current IAR 47 A 2
Repetitive Avalanche Energy EAR 11 mJ 2
Junction-to-Case RθJC 1.32 °C/W 2
Junction-to-Ambient (PCB Mount) RθJA 50 °C/W PCB mount ⑧⑨ 2
Junction-to-Ambient RθJA 110 °C/W 2

CAD (KiCad official)

  • Symbol: IRFR1018ETR
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: irfr1018etr-etched.step / irfr1018etr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr1018etr.step / irfr1018etr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 18da011dc7877652, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF