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IRFP4668PBF

Infineon Technologies · MOSFETs · TO-247AC

IRFP4668PBF from Infineon Technologies, in a TO-247AC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-to-source voltage is rated at ±30 V (VGS max) with a threshold of 3.0 V to 5.0 V.
2 D passive Drain terminal; rated for 130 A continuous drain current at TC = 25°C (VGS = 10 V) and a drain-to-source breakdown voltage of 200 V.
3 S passive Source terminal; continuous source (body diode) current is rated at 130 A and pulsed source current at 520 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247AC
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Drain Current (TC = 25°C) ID 130 A VGS @ 10V, TC = 25°C 1
Continuous Drain Current (TC = 100°C) ID 92 A VGS @ 10V, TC = 100°C 1
Pulsed Drain Current IDM 520 A 1
Maximum Power Dissipation PD 520 W TC = 25°C 1
Linear Derating Factor 3.5 W/°C 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy (thermally limited) EAS 760 mJ Thermally limited, single pulse 1
Repetitive Avalanche Energy EAR 57 mJ 1
Operating Junction Temperature Range TJ -55 175 °C 1
Storage Temperature Range TSTG -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 1
Mounting Torque 10 lbin 6-32 or M3 screw; printed as 10lbin (1.1Nm) 1
Junction-to-Case Thermal Resistance RθJC 0.29 °C/W Junction-to-Case 1
Case-to-Sink Thermal Resistance, Flat Greased Surface RθCS 0.24 °C/W Case-to-Sink, flat greased surface 1
Junction-to-Ambient Thermal Resistance RθJA 40 °C/W Junction-to-Ambient, when mounted on 1in square PCB (FR-4 or G-10) 1
Drain-to-Source Breakdown Voltage V(BR)DSS 200 V VGS = 0V, ID = 250μA 2
Static Drain-to-Source On-Resistance RDS(on) 8 9.7 mΩ VGS = 10V, ID = 81A 2
Gate Threshold Voltage VGS(th) 3 5 V VDS = VGS, ID = 250μA 2
Drain-to-Source Leakage Current (TJ = 25°C) IDSS 20 μA VDS = 200V, VGS = 0V 2
Drain-to-Source Leakage Current (TJ = 125°C) IDSS 250 μA VDS = 200V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 150 S VDS = 50V, ID = 81A 2
Total Gate Charge Qg 161 241 nC VGS = 10V, ID = 81A, VDS = 100V 2
Continuous Source Current (Body Diode) IS 130 A 2
Pulsed Source Current (Body Diode) ISM 520 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 81A, VGS = 0V 2

CAD (KiCad official)

  • Symbol: IRFP4668PBF
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247AC (KiCad packages3D, STEP)
  • 3D model files: irfp4668pbf-etched.step / irfp4668pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfp4668pbf.step / irfp4668pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 cdc3a5738f45a546, retrieved 2026-11-06, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF