component
IRFP4668PBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-247AC. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 11h ago |
| viewers | 11h ago |
| irfp4668pbf-etched.glb | 11h ago |
| irfp4668pbf-etched.step | 11h ago |
| irfp4668pbf-hero.glb | 11h ago |
| irfp4668pbf-hero.overlay.json | 11h ago |
| irfp4668pbf.glb | 11h ago |
| irfp4668pbf.kicad_mod | 11h ago |
| irfp4668pbf.kicad_sym | 11h ago |
| irfp4668pbf.lbr | 11h ago |
| irfp4668pbf.step | 11h ago |
| package.json | 11h ago |
| page.json | 11h ago |
| README.md | 11h ago |
| verification.json | 11h ago |
IRFP4668PBF
Infineon Technologies · MOSFETs · TO-247AC
IRFP4668PBF from Infineon Technologies, in a TO-247AC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-to-source voltage is rated at ±30 V (VGS max) with a threshold of 3.0 V to 5.0 V. |
| 2 | D | passive | Drain terminal; rated for 130 A continuous drain current at TC = 25°C (VGS = 10 V) and a drain-to-source breakdown voltage of 200 V. |
| 3 | S | passive | Source terminal; continuous source (body diode) current is rated at 130 A and pulsed source current at 520 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247AC |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current (TC = 25°C) | ID | 130 | A | VGS @ 10V, TC = 25°C | 1 | ||
| Continuous Drain Current (TC = 100°C) | ID | 92 | A | VGS @ 10V, TC = 100°C | 1 | ||
| Pulsed Drain Current | IDM | 520 | A | 1 | |||
| Maximum Power Dissipation | PD | 520 | W | TC = 25°C | 1 | ||
| Linear Derating Factor | 3.5 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy (thermally limited) | EAS | 760 | mJ | Thermally limited, single pulse | 1 | ||
| Repetitive Avalanche Energy | EAR | 57 | mJ | 1 | |||
| Operating Junction Temperature Range | TJ | -55 | 175 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | for 10 seconds (1.6mm from case) | 1 | |||
| Mounting Torque | 10 | lbin | 6-32 or M3 screw; printed as 10lbin (1.1Nm) | 1 | |||
| Junction-to-Case Thermal Resistance | RθJC | 0.29 | °C/W | Junction-to-Case | 1 | ||
| Case-to-Sink Thermal Resistance, Flat Greased Surface | RθCS | 0.24 | °C/W | Case-to-Sink, flat greased surface | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 40 | °C/W | Junction-to-Ambient, when mounted on 1in square PCB (FR-4 or G-10) | 1 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 200 | V | VGS = 0V, ID = 250μA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 8 | 9.7 | mΩ | VGS = 10V, ID = 81A | 2 | |
| Gate Threshold Voltage | VGS(th) | 3 | 5 | V | VDS = VGS, ID = 250μA | 2 | |
| Drain-to-Source Leakage Current (TJ = 25°C) | IDSS | 20 | μA | VDS = 200V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current (TJ = 125°C) | IDSS | 250 | μA | VDS = 200V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 150 | S | VDS = 50V, ID = 81A | 2 | ||
| Total Gate Charge | Qg | 161 | 241 | nC | VGS = 10V, ID = 81A, VDS = 100V | 2 | |
| Continuous Source Current (Body Diode) | IS | 130 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 520 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 81A, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
IRFP4668PBF - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247AC (KiCad packages3D, STEP)
- 3D model files:
irfp4668pbf-etched.step/irfp4668pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfp4668pbf.step/irfp4668pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
cdc3a5738f45a546, retrieved 2026-11-06, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).