# IRFP260N

**Minos** · MOSFETs · TO-247

IRFP260N from Minos, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGSS limited to ±20 V and threshold VGS(th) of 2.0 to 4.0 V at ID = 250µA. |
| 2 | D | passive | Drain (also connected to the mounting tab); VDSS 200 V, continuous ID 50 A and pulsed IDM 200 A. |
| 3 | S | passive | Source; body diode continuous current IS is 50 A and pulsed ISM is 200 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-247 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 200 | V | TC = 25ºC | 1 |
| Continuous Drain Current | ID |  |  | 50 | A | TC = 25ºC | 1 |
| Pulsed Drain Current | IDM |  |  | 200 | A | TC = 25ºC | 1 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V | TC = 25ºC | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 780 | mJ | note 2 | 1 |
| Avalanche Current | IAR |  |  | 39.5 | V/ns | note 1; unit as printed | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 468 | W | note 1; unit as printed | 1 |
| Power Dissipation | PD |  |  | 250 | W | TC = 25ºC | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 175 | ºC |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 200 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 200V, VGS = 0V, TJ = 25℃ | 2 |
| Gate-Source Leakage (VGS = +20V) | IGSS |  |  | 100 | nA | VGS = +20V, VDS = 0V | 2 |
| Gate-Source Leakage (VGS = -20V) | IGSS |  |  | -100 | nA | VGS = -20V, VDS = 0V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 40 | 50 | mΩ | VGS = 10V, ID = 25A | 2 |
| Continuous Body Diode Current | IS |  |  | 50 | A | TC = 25℃ | 2 |
| Pulsed Diode Forward Current | ISM |  |  | 200 | A |  | 2 |
| Body Diode Voltage | VSD |  |  | 1.5 | V | TJ = 25℃, ISD = 25A, VGS = 0V | 2 |
| Thermal Resistance, Junction-to-Case | RthJC |  | 0.5 |  | ℃/W |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RthJA |  | 45 |  | ℃/W |  | 2 |

## CAD (KiCad official)

- Symbol: `IRFP260N`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files: `irfp260n-etched.step` / `irfp260n-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfp260n.step` / `irfp260n.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Minos datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603548492699099136) (7 pp, sha256 `2c3bf26c4d8ce7b0`, retrieved 2026-11-06, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irfp260n-datasheet.pdf)