component
IRFP260N
Public Made by Adomby adom
Minos MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7h ago |
| viewers | 7h ago |
| irfp260n-etched.glb | 7h ago |
| irfp260n-etched.step | 7h ago |
| irfp260n-hero.glb | 7h ago |
| irfp260n-hero.overlay.json | 7h ago |
| irfp260n.glb | 7h ago |
| irfp260n.kicad_mod | 7h ago |
| irfp260n.kicad_sym | 7h ago |
| irfp260n.lbr | 7h ago |
| irfp260n.step | 7h ago |
| package.json | 7h ago |
| page.json | 7h ago |
| README.md | 7h ago |
| verification.json | 7h ago |
IRFP260N
Minos · MOSFETs · TO-247
IRFP260N from Minos, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGSS limited to ±20 V and threshold VGS(th) of 2.0 to 4.0 V at ID = 250µA. |
| 2 | D | passive | Drain (also connected to the mounting tab); VDSS 200 V, continuous ID 50 A and pulsed IDM 200 A. |
| 3 | S | passive | Source; body diode continuous current IS is 50 A and pulsed ISM is 200 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-247 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 200 | V | TC = 25ºC | 1 | ||
| Continuous Drain Current | ID | 50 | A | TC = 25ºC | 1 | ||
| Pulsed Drain Current | IDM | 200 | A | TC = 25ºC | 1 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TC = 25ºC | 1 | |
| Single Pulse Avalanche Energy | EAS | 780 | mJ | note 2 | 1 | ||
| Avalanche Current | IAR | 39.5 | V/ns | note 1; unit as printed | 1 | ||
| Repetitive Avalanche Energy | EAR | 468 | W | note 1; unit as printed | 1 | ||
| Power Dissipation | PD | 250 | W | TC = 25ºC | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | ºC | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 200 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 200V, VGS = 0V, TJ = 25℃ | 2 | ||
| Gate-Source Leakage (VGS = +20V) | IGSS | 100 | nA | VGS = +20V, VDS = 0V | 2 | ||
| Gate-Source Leakage (VGS = -20V) | IGSS | -100 | nA | VGS = -20V, VDS = 0V | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 40 | 50 | mΩ | VGS = 10V, ID = 25A | 2 | |
| Continuous Body Diode Current | IS | 50 | A | TC = 25℃ | 2 | ||
| Pulsed Diode Forward Current | ISM | 200 | A | 2 | |||
| Body Diode Voltage | VSD | 1.5 | V | TJ = 25℃, ISD = 25A, VGS = 0V | 2 | ||
| Thermal Resistance, Junction-to-Case | RthJC | 0.5 | ℃/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RthJA | 45 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
IRFP260N - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
irfp260n-etched.step/irfp260n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfp260n.step/irfp260n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Minos datasheet (7 pp, sha256
2c3bf26c4d8ce7b0, retrieved 2026-11-06, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).