component
IRFML8244TR
Public Made by Adomby adom
UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRFML8244TR
UMW · MOSFETs · SOT-23
IRFML8244TR from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET, with gate-to-source voltage rated at ±20 V (VGS) in the maximum ratings. |
| 2 | S | passive | Source terminal of the MOSFET, the reference for VGS, with continuous source (body diode) current IS rated at 1.25 A. |
| 3 | D | passive | Drain terminal of the MOSFET, rated for VDS of 25 V and continuous drain current ID of 5.8 A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 25 | V | ID=250µA, VGS=0V | 3 | ||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | 0.02 | V/°C | ID=1mA, Reference to 25°C | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1.35 | 2.35 | V | VDS=VGS, ID=10µA | 3 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 20 | 24 | mΩ | VGS=10V, ID=5.8A | 3 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 32 | 41 | mΩ | VGS=4.5V, ID=4.6A | 3 | |
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=20V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 150 | µA | VDS=20V, VGS=0V, TJ=125°C | 3 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 3 | ||
| Input Capacitance | Ciss | 430 | pF | VGS=0V, VDS=10V, ƒ=1MHz | 3 | ||
| Output Capacitance | Coss | 110 | pF | VGS=0V, VDS=10V, ƒ=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 49 | pF | VGS=0V, VDS=10V, ƒ=1MHz | 3 | ||
| Continuous Source Current (Body Diode) | IS | 1.25 | A | TJ=25°C, IS=5.8A, VGS=0V | 4 | ||
| Pulsed Source Current (Body Diode) | ISM | 24 | A | Body diode pulsed current, footnote ① | 4 | ||
| Drain-Source Voltage | VDS | 25 | V | TA=25°C unless otherwise noted | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID | 5.8 | A | TA=25°C | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID | 4.6 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 24 | A | TA=25°C unless otherwise noted | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | TA=25°C | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA=70°C | 1 | ||
| Linear Derating Factor | 0.01 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | Printed as ±20 V | 1 | |
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient | RθJA | 100 | °C/W | Surface mounted on 1 in square Cu board (note ③) | 2 | ||
| Junction-to-Ambient (t<10s) | RθJA | 99 | °C/W | t<10s (note ④) | 2 |
CAD (KiCad official)
- Symbol:
IRFML8244TR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
irfml8244tr-etched.step/irfml8244tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfml8244tr.step/irfml8244tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (12 pp, sha256
15dcde98ec8c0f61, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFML8244TR
**UMW** · MOSFETs · SOT-23
IRFML8244TR from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET, with gate-to-source voltage rated at ±20 V (VGS) in the maximum ratings. |
| 2 | S | passive | Source terminal of the MOSFET, the reference for VGS, with continuous source (body diode) current IS rated at 1.25 A. |
| 3 | D | passive | Drain terminal of the MOSFET, rated for VDS of 25 V and continuous drain current ID of 5.8 A at TA=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 25 | | | V | ID=250µA, VGS=0V | 3 |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | | 0.02 | | V/°C | ID=1mA, Reference to 25°C | 3 |
| Gate Threshold Voltage | VGS(th) | 1.35 | | 2.35 | V | VDS=VGS, ID=10µA | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | 20 | 24 | mΩ | VGS=10V, ID=5.8A | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | 32 | 41 | mΩ | VGS=4.5V, ID=4.6A | 3 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | µA | VDS=20V, VGS=0V | 3 |
| Drain-to-Source Leakage Current | IDSS | | | 150 | µA | VDS=20V, VGS=0V, TJ=125°C | 3 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS=20V | 3 |
| Gate-to-Source Reverse Leakage | IGSS | -100 | | | nA | VGS=-20V | 3 |
| Input Capacitance | Ciss | | 430 | | pF | VGS=0V, VDS=10V, ƒ=1MHz | 3 |
| Output Capacitance | Coss | | 110 | | pF | VGS=0V, VDS=10V, ƒ=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 49 | | pF | VGS=0V, VDS=10V, ƒ=1MHz | 3 |
| Continuous Source Current (Body Diode) | IS | | | 1.25 | A | TJ=25°C, IS=5.8A, VGS=0V | 4 |
| Pulsed Source Current (Body Diode) | ISM | | | 24 | A | Body diode pulsed current, footnote ① | 4 |
| Drain-Source Voltage | VDS | | | 25 | V | TA=25°C unless otherwise noted | 1 |
| Continuous Drain Current, VGS @ 10V | ID | | | 5.8 | A | TA=25°C | 1 |
| Continuous Drain Current, VGS @ 10V | ID | | | 4.6 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM | | | 24 | A | TA=25°C unless otherwise noted | 1 |
| Maximum Power Dissipation | PD | | | 1.25 | W | TA=25°C | 1 |
| Maximum Power Dissipation | PD | | | 0.8 | W | TA=70°C | 1 |
| Linear Derating Factor | | | | 0.01 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | Printed as ±20 V | 1 |
| Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | °C | | 1 |
| Junction-to-Ambient | RθJA | | | 100 | °C/W | Surface mounted on 1 in square Cu board (note ③) | 2 |
| Junction-to-Ambient (t<10s) | RθJA | | | 99 | °C/W | t<10s (note ④) | 2 |
## CAD (KiCad official)
- Symbol: `IRFML8244TR`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `irfml8244tr-etched.step` / `irfml8244tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfml8244tr.step` / `irfml8244tr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755879105407930368) (12 pp, sha256 `15dcde98ec8c0f61`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfml8244tr-datasheet.pdf)