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IRFML8244TR

UMW · MOSFETs · SOT-23

IRFML8244TR from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the MOSFET, with gate-to-source voltage rated at ±20 V (VGS) in the maximum ratings.
2 S passive Source terminal of the MOSFET, the reference for VGS, with continuous source (body diode) current IS rated at 1.25 A.
3 D passive Drain terminal of the MOSFET, rated for VDS of 25 V and continuous drain current ID of 5.8 A at TA=25°C.

Key specifications

Parameter Value
Manufacturer UMW
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 25 V ID=250µA, VGS=0V 3
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/ΔTJ 0.02 V/°C ID=1mA, Reference to 25°C 3
Gate Threshold Voltage VGS(th) 1.35 2.35 V VDS=VGS, ID=10µA 3
Static Drain-to-Source On-Resistance RDS(ON) 20 24 mΩ VGS=10V, ID=5.8A 3
Static Drain-to-Source On-Resistance RDS(ON) 32 41 mΩ VGS=4.5V, ID=4.6A 3
Drain-to-Source Leakage Current IDSS 1 µA VDS=20V, VGS=0V 3
Drain-to-Source Leakage Current IDSS 150 µA VDS=20V, VGS=0V, TJ=125°C 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Input Capacitance Ciss 430 pF VGS=0V, VDS=10V, ƒ=1MHz 3
Output Capacitance Coss 110 pF VGS=0V, VDS=10V, ƒ=1MHz 3
Reverse Transfer Capacitance Crss 49 pF VGS=0V, VDS=10V, ƒ=1MHz 3
Continuous Source Current (Body Diode) IS 1.25 A TJ=25°C, IS=5.8A, VGS=0V 4
Pulsed Source Current (Body Diode) ISM 24 A Body diode pulsed current, footnote ① 4
Drain-Source Voltage VDS 25 V TA=25°C unless otherwise noted 1
Continuous Drain Current, VGS @ 10V ID 5.8 A TA=25°C 1
Continuous Drain Current, VGS @ 10V ID 4.6 A TA=70°C 1
Pulsed Drain Current IDM 24 A TA=25°C unless otherwise noted 1
Maximum Power Dissipation PD 1.25 W TA=25°C 1
Maximum Power Dissipation PD 0.8 W TA=70°C 1
Linear Derating Factor 0.01 W/°C 1
Gate-to-Source Voltage VGS -20 20 V Printed as ±20 V 1
Junction and Storage Temperature Range TJ,TSTG -55 150 °C 1
Junction-to-Ambient RθJA 100 °C/W Surface mounted on 1 in square Cu board (note ③) 2
Junction-to-Ambient (t<10s) RθJA 99 °C/W t<10s (note ④) 2

CAD (KiCad official)

  • Symbol: IRFML8244TR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: irfml8244tr-etched.step / irfml8244tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfml8244tr.step / irfml8244tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (12 pp, sha256 15dcde98ec8c0f61, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF