# IRFIBE20GPBF

**Vishay Intertech** · MOSFETs · TO-220-3

IRFIBE20GPBF from Vishay Intertech, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, rated for VGS of ±20 V maximum with a threshold of 2.0 to 4.0 V at ID = 250 μA. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for VDS of 800 V maximum and continuous ID of 1.4 A at TC = 25 °C. |
| 3 | S | passive | Source of the N-channel MOSFET, with continuous body-diode current IS of 1.4 A and pulsed 5.6 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | 800 | V | TC = 25 °C | 1 |
| Gate-source voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous drain current | ID |  |  | 1.4 | A | VGS at 10 V, TC = 25 °C | 1 |
| Continuous drain current | ID |  |  | 0.86 | A | VGS at 10 V, TC = 100 °C | 1 |
| Pulsed drain current | IDM |  |  | 5.6 | A |  | 1 |
| Linear derating factor |  |  |  | 0.24 | W/°C |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 180 | mJ | VDD = 50 V, starting TJ = 25 °C, L = 172 mH, RG = 25 Ω, IAS = 1.4 A | 1 |
| Repetitive avalanche current | IAR |  |  | 1.4 | A |  | 1 |
| Repetitive avalanche energy | EAR |  |  | 3 | mJ |  | 1 |
| Maximum power dissipation | PD |  |  | 30 | W | TC = 25 °C | 1 |
| Peak diode recovery dV/dt | dV/dt |  |  | 2 | V/ns | ISD ≤ 1.8 A, dI/dt ≤ 80 A/μs, VDD ≤ 600, TJ ≤ 150 °C | 1 |
| Operating junction and storage temperature range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering recommendations (peak temperature) |  |  |  | 300 | °C | For 10 s, 1.6 mm from case | 1 |
| Mounting torque |  |  |  | 0.6 | Nm | M3 screw | 1 |
| Maximum junction-to-ambient | RthJA |  |  | 65 | °C/W |  | 2 |
| Maximum junction-to-case (drain) | RthJC |  |  | 4.1 | °C/W |  | 2 |
| Drain-source breakdown voltage | VDS | 800 |  |  | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-source threshold voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-source leakage | IGSS | -100 |  | 100 | nA | VGS = ± 20 V | 2 |
| Zero gate voltage drain current | IDSS |  |  | 100 | μA | VDS = 800 V, VGS = 0 V | 2 |
| Zero gate voltage drain current | IDSS |  |  | 500 | μA | VDS = 640 V, VGS = 0 V, TJ = 125 °C | 2 |
| Drain-source on-state resistance | RDS(on) |  |  | 6.5 | Ω | VGS = 10 V, ID = 0.84 A | 2 |
| Forward transconductance | gfs | 1 |  |  | S | VDS = 10 V, ID = 0.84 A | 2 |
| Total gate charge | Qg |  |  | 38 | nC | VGS = 10 V, ID = 1.8 A, VDS = 400 V | 2 |
| Gate-source charge | Qgs |  |  | 5 | nC | VGS = 10 V, ID = 1.8 A, VDS = 400 V | 2 |
| Gate-drain charge | Qgd |  |  | 21 | nC | VGS = 10 V, ID = 1.8 A, VDS = 400 V | 2 |
| Continuous source-drain diode current | IS |  |  | 1.4 | A | MOSFET symbol showing integral reverse p-n junction diode | 2 |
| Pulsed diode forward current | ISM |  |  | 5.6 | A |  | 2 |
| Body diode voltage | VSD |  |  | 1.4 | V | TJ = 25 °C, IS = 1.4 A, VGS = 0 V | 2 |
| Body diode reverse recovery time | trr |  | 380 | 570 | ns | TJ = 25 °C, IF = 1.8 A, dI/dt = 100 A/μs | 2 |
| Body diode reverse recovery charge | Qrr |  | 0.94 | 1.4 | μC | TJ = 25 °C, IF = 1.8 A, dI/dt = 100 A/μs | 2 |
| VDS temperature coefficient | ΔVDS/TJ |  | 0.98 |  | V/°C | Reference to 25 °C, ID = 1 mA | 2 |
| Input capacitance | Ciss |  | 530 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Output capacitance | Coss |  | 150 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Reverse transfer capacitance | Crss |  | 90 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Drain to sink capacitance | C |  | 12 |  | pF | f = 1.0 MHz | 2 |
| Turn-on delay time | td(on) |  | 8.2 |  | ns | VDD = 400 V, ID = 1.8 A, RG = 18 Ω, RD = 230 Ω | 2 |
| Rise time | tr |  | 17 |  | ns | VDD = 400 V, ID = 1.8 A, RG = 18 Ω, RD = 230 Ω | 2 |
| Turn-off delay time | td(off) |  | 58 |  | ns | VDD = 400 V, ID = 1.8 A, RG = 18 Ω, RD = 230 Ω | 2 |
| Fall time | tf |  | 27 |  | ns | VDD = 400 V, ID = 1.8 A, RG = 18 Ω, RD = 230 Ω | 2 |
| Internal drain inductance | LD |  | 4.5 |  | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |
| Internal source inductance | LS |  | 7.5 |  | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |

## CAD (KiCad official)

- Symbol: `IRFIBE20GPBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files: `irfibe20gpbf-etched.step` / `irfibe20gpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfibe20gpbf.step` / `irfibe20gpbf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Vishay Intertech datasheet](docs/irfibe20gpbf-datasheet.pdf) (10 pp, sha256 `b7f94736c45c4c53`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irfibe20gpbf-datasheet.pdf)