component

IRFIBE20GPBF

Public Made by Adom

by adom

Vishay Intertech MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorirfibe20gpbffactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 11d ago
viewers irfibe20gpbf: viewers · Ray 11d ago
irfibe20gpbf-etched.glb Publish 0.1.0 · Ray 11d ago
irfibe20gpbf-etched.step irfibe20gpbf: factory component page (tier=mfr) · Ray 11d ago
irfibe20gpbf-hero.glb irfibe20gpbf: hero GLB from the etched model (keeps the MPN mark) · Ray 11d ago
irfibe20gpbf-hero.overlay.json Publish 0.1.0 · Ray 11d ago
irfibe20gpbf.glb Publish 0.1.0 · Ray 11d ago
irfibe20gpbf.kicad_mod Publish 0.1.0 · Ray 11d ago
irfibe20gpbf.kicad_sym Publish 0.1.0 · Ray 11d ago
irfibe20gpbf.lbr Publish 0.1.0 · Ray 11d ago
irfibe20gpbf.step Publish 0.1.0 · Ray 11d ago
package.json Publish 0.1.0 · Ray 11d ago
page.json Set visibility: public · Ray 11d ago
README.md Publish 0.1.0 · Ray 11d ago

IRFIBE20GPBF

Vishay Intertech · MOSFETs · TO-220-3

IRFIBE20GPBF from Vishay Intertech, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, rated for VGS of ±20 V maximum with a threshold of 2.0 to 4.0 V at ID = 250 μA.
2 D passive Drain of the N-channel MOSFET, rated for VDS of 800 V maximum and continuous ID of 1.4 A at TC = 25 °C.
3 S passive Source of the N-channel MOSFET, with continuous body-diode current IS of 1.4 A and pulsed 5.6 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 800 V TC = 25 °C 1
Gate-source voltage VGS -20 20 V 1
Continuous drain current ID 1.4 A VGS at 10 V, TC = 25 °C 1
Continuous drain current ID 0.86 A VGS at 10 V, TC = 100 °C 1
Pulsed drain current IDM 5.6 A 1
Linear derating factor 0.24 W/°C 1
Single pulse avalanche energy EAS 180 mJ VDD = 50 V, starting TJ = 25 °C, L = 172 mH, RG = 25 Ω, IAS = 1.4 A 1
Repetitive avalanche current IAR 1.4 A 1
Repetitive avalanche energy EAR 3 mJ 1
Maximum power dissipation PD 30 W TC = 25 °C 1
Peak diode recovery dV/dt dV/dt 2 V/ns ISD ≤ 1.8 A, dI/dt ≤ 80 A/μs, VDD ≤ 600, TJ ≤ 150 °C 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Soldering recommendations (peak temperature) 300 °C For 10 s, 1.6 mm from case 1
Mounting torque 0.6 Nm M3 screw 1
Maximum junction-to-ambient RthJA 65 °C/W 2
Maximum junction-to-case (drain) RthJC 4.1 °C/W 2
Drain-source breakdown voltage VDS 800 V VGS = 0 V, ID = 250 μA 2
Gate-source threshold voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS -100 100 nA VGS = ± 20 V 2
Zero gate voltage drain current IDSS 100 μA VDS = 800 V, VGS = 0 V 2
Zero gate voltage drain current IDSS 500 μA VDS = 640 V, VGS = 0 V, TJ = 125 °C 2
Drain-source on-state resistance RDS(on) 6.5 Ω VGS = 10 V, ID = 0.84 A 2
Forward transconductance gfs 1 S VDS = 10 V, ID = 0.84 A 2
Total gate charge Qg 38 nC VGS = 10 V, ID = 1.8 A, VDS = 400 V 2
Gate-source charge Qgs 5 nC VGS = 10 V, ID = 1.8 A, VDS = 400 V 2
Gate-drain charge Qgd 21 nC VGS = 10 V, ID = 1.8 A, VDS = 400 V 2
Continuous source-drain diode current IS 1.4 A MOSFET symbol showing integral reverse p-n junction diode 2
Pulsed diode forward current ISM 5.6 A 2
Body diode voltage VSD 1.4 V TJ = 25 °C, IS = 1.4 A, VGS = 0 V 2
Body diode reverse recovery time trr 380 570 ns TJ = 25 °C, IF = 1.8 A, dI/dt = 100 A/μs 2
Body diode reverse recovery charge Qrr 0.94 1.4 μC TJ = 25 °C, IF = 1.8 A, dI/dt = 100 A/μs 2
VDS temperature coefficient ΔVDS/TJ 0.98 V/°C Reference to 25 °C, ID = 1 mA 2
Input capacitance Ciss 530 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Output capacitance Coss 150 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Reverse transfer capacitance Crss 90 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Drain to sink capacitance C 12 pF f = 1.0 MHz 2
Turn-on delay time td(on) 8.2 ns VDD = 400 V, ID = 1.8 A, RG = 18 Ω, RD = 230 Ω 2
Rise time tr 17 ns VDD = 400 V, ID = 1.8 A, RG = 18 Ω, RD = 230 Ω 2
Turn-off delay time td(off) 58 ns VDD = 400 V, ID = 1.8 A, RG = 18 Ω, RD = 230 Ω 2
Fall time tf 27 ns VDD = 400 V, ID = 1.8 A, RG = 18 Ω, RD = 230 Ω 2
Internal drain inductance LD 4.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2
Internal source inductance LS 7.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2

CAD (KiCad official)

  • Symbol: IRFIBE20GPBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: irfibe20gpbf-etched.step / irfibe20gpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfibe20gpbf.step / irfibe20gpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (10 pp, sha256 b7f94736c45c4c53, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF