component
IRFH8311PBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
IRFH8311PBF-HXY
HXY MOSFET · MOSFETs · DFN5x6-8L
IRFH8311PBF-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal and Pin 1 of the N-channel MOSFET; continuous source current is rated 150 A (package limited to 85 A) with VDS up to 30 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; continuous source current is rated 150 A (package limited to 85 A) with VDS up to 30 V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; continuous source current is rated 150 A (package limited to 85 A) with VDS up to 30 V. |
| 4 | G | input | Gate terminal with maximum gate-source voltage of ±20 V and a threshold voltage of 1.2 V min to 2.5 V max at VGS=VDS, ID=250 uA. |
| 5 | D | passive | Drain terminal with maximum drain-source voltage of 30 V and pulsed drain current up to 160 A. |
| 6 | D | passive | Drain terminal with maximum drain-source voltage of 30 V and pulsed drain current up to 160 A. |
| 7 | D | passive | Drain terminal with maximum drain-source voltage of 30 V and pulsed drain current up to 160 A. |
| 8 | D | passive | Drain terminal with maximum drain-source voltage of 30 V and pulsed drain current up to 160 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
IRFH8311PBF-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
irfh8311pbf-hxy-etched.step/irfh8311pbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfh8311pbf-hxy.step/irfh8311pbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
f10aff52c6320deb, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFH8311PBF-HXY
**HXY MOSFET** · MOSFETs · DFN5x6-8L
IRFH8311PBF-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal and Pin 1 of the N-channel MOSFET; continuous source current is rated 150 A (package limited to 85 A) with VDS up to 30 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; continuous source current is rated 150 A (package limited to 85 A) with VDS up to 30 V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; continuous source current is rated 150 A (package limited to 85 A) with VDS up to 30 V. |
| 4 | G | input | Gate terminal with maximum gate-source voltage of ±20 V and a threshold voltage of 1.2 V min to 2.5 V max at VGS=VDS, ID=250 uA. |
| 5 | D | passive | Drain terminal with maximum drain-source voltage of 30 V and pulsed drain current up to 160 A. |
| 6 | D | passive | Drain terminal with maximum drain-source voltage of 30 V and pulsed drain current up to 160 A. |
| 7 | D | passive | Drain terminal with maximum drain-source voltage of 30 V and pulsed drain current up to 160 A. |
| 8 | D | passive | Drain terminal with maximum drain-source voltage of 30 V and pulsed drain current up to 160 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
## CAD (KiCad official)
- Symbol: `IRFH8311PBF-HXY`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `irfh8311pbf-hxy-etched.step` / `irfh8311pbf-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfh8311pbf-hxy.step` / `irfh8311pbf-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/irfh8311pbf-hxy-datasheet.pdf) (6 pp, sha256 `f10aff52c6320deb`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfh8311pbf-hxy-datasheet.pdf)