component
IRFH8311PBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 2h ago |
| viewers | 2h ago |
| irfh8311pbf-hxy-etched.glb | 2h ago |
| irfh8311pbf-hxy-etched.step | 2h ago |
| irfh8311pbf-hxy-hero.glb | 2h ago |
| irfh8311pbf-hxy-hero.overlay.json | 2h ago |
| irfh8311pbf-hxy.glb | 2h ago |
| irfh8311pbf-hxy.kicad_mod | 2h ago |
| irfh8311pbf-hxy.kicad_sym | 2h ago |
| irfh8311pbf-hxy.lbr | 2h ago |
| irfh8311pbf-hxy.step | 2h ago |
| package.json | 2h ago |
| page.json | 2h ago |
| README.md | 2h ago |
IRFH8311PBF-HXY
HXY MOSFET · MOSFETs · DFN5x6-8L
IRFH8311PBF-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal and Pin 1 of the N-channel MOSFET; continuous source current is rated 150 A (package limited to 85 A) with VDS up to 30 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; continuous source current is rated 150 A (package limited to 85 A) with VDS up to 30 V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; continuous source current is rated 150 A (package limited to 85 A) with VDS up to 30 V. |
| 4 | G | input | Gate terminal with maximum gate-source voltage of ±20 V and a threshold voltage of 1.2 V min to 2.5 V max at VGS=VDS, ID=250 uA. |
| 5 | D | passive | Drain terminal with maximum drain-source voltage of 30 V and pulsed drain current up to 160 A. |
| 6 | D | passive | Drain terminal with maximum drain-source voltage of 30 V and pulsed drain current up to 160 A. |
| 7 | D | passive | Drain terminal with maximum drain-source voltage of 30 V and pulsed drain current up to 160 A. |
| 8 | D | passive | Drain terminal with maximum drain-source voltage of 30 V and pulsed drain current up to 160 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
IRFH8311PBF-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
irfh8311pbf-hxy-etched.step/irfh8311pbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfh8311pbf-hxy.step/irfh8311pbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
f10aff52c6320deb, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).