# IRFBF30PBF

**Vishay Intertech** · MOSFETs · TO-220AB

IRFBF30PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, rated for VGS of ±20 V maximum with a gate-source threshold of 2.0 V to 4.0 V at 250 µA. |
| 2 | D | passive | Drain, rated for VDS of 900 V and continuous ID of 3.6 A at TC = 25 °C (2.3 A at 100 °C), with the case connected to drain per the junction-to-case (drain) thermal rating. |
| 3 | S | passive | Source of the N-channel MOSFET, carrying the continuous body-diode current IS of up to 3.6 A (14 A pulsed). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220AB |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 900 |  |  | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 100 | μA | VDS = 900 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 500 | μA | VDS = 720 V, VGS = 0 V, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 3.7 | Ω | VGS = 10 V, ID = 2.2 A | 2 |
| Forward Transconductance | gfs | 2.3 |  |  | S | VDS = 100 V, ID = 2.2 A | 2 |
| Total Gate Charge | Qg |  |  | 78 | nC | VGS = 10 V, ID = 3.6 A, VDS = 360 V | 2 |
| Gate-Source Charge | Qgs |  |  | 10 | nC | VGS = 10 V, ID = 3.6 A, VDS = 360 V | 2 |
| Gate-Drain Charge | Qgd |  |  | 42 | nC | VGS = 10 V, ID = 3.6 A, VDS = 360 V | 2 |
| Continuous Source-Drain Diode Current | IS |  |  | 3.6 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 |
| Pulsed Diode Forward Current | ISM |  |  | 14 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 |
| Body Diode Voltage | VSD |  |  | 1.8 | V | TJ = 25 °C, IS = 3.6 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 430 | 650 | ns | TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 1.4 | 2.1 | μC | TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μs | 2 |
| Drain-Source Voltage | VDS |  |  | 900 | V | TC = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 3.6 | A | VGS at 10 V, TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 2.3 | A | VGS at 10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 14 | A | TC = 25 °C | 1 |
| Linear Derating Factor |  |  |  | 1 | W/°C | TC = 25 °C | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 250 | mJ | VDD = 50 V, starting TJ = 25 °C, L = 36 mH, Rg = 25 Ω, IAS = 3.6 A | 1 |
| Repetitive Avalanche Current | IAR |  |  | 3.6 | A | TC = 25 °C | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 13 | mJ | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 125 | W | TC = 25 °C | 1 |
| Peak Diode Recovery dV/dt | dV/dt |  |  | 1.5 | V/ns | ISD ≤ 3.6 A, dI/dt ≤ 70 A/μs, TJ ≤ 150 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering Recommendations (Peak Temperature) |  |  |  | 300 | °C | for 10 s, 1.6 mm from case | 1 |
| Mounting Torque |  |  |  | 10 | lbf · in | 6-32 or M3 screw | 1 |
| Maximum Junction-to-Ambient | RthJA |  |  | 62 | °C/W |  | 2 |
| Maximum Junction-to-Case (Drain) | RthJC |  |  | 1 | °C/W |  | 2 |
| Case-to-Sink, Flat, Greased Surface | RthCS |  | 0.5 |  | °C/W |  | 2 |
| VDS Temperature Coefficient | ΔVDS/ΔTJ |  | 1.1 |  | V/°C | Reference to 25 °C, ID = 1 mA | 2 |
| Input Capacitance | Ciss |  | 1200 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Output Capacitance | Coss |  | 320 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 200 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Turn-On Delay Time | td(on) |  | 14 |  | ns | VDD = 450 V, ID = 3.6 A, Rg = 12 Ω, RD = 120 Ω | 2 |
| Rise Time | tr |  | 25 |  | ns | VDD = 450 V, ID = 3.6 A, Rg = 12 Ω, RD = 120 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 90 |  | ns | VDD = 450 V, ID = 3.6 A, Rg = 12 Ω, RD = 120 Ω | 2 |
| Fall Time | tf |  | 30 |  | ns | VDD = 450 V, ID = 3.6 A, Rg = 12 Ω, RD = 120 Ω | 2 |
| Internal Drain Inductance | LD |  | 4.5 |  | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |
| Internal Source Inductance | LS |  | 7.5 |  | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |

## CAD (KiCad official)

- Symbol: `IRFBF30PBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irfbf30pbf-etched.step` / `irfbf30pbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfbf30pbf.step` / `irfbf30pbf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Vishay Intertech datasheet](docs/irfbf30pbf-datasheet.pdf) (9 pp, sha256 `9fd2ccb0537ba6de`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irfbf30pbf-datasheet.pdf)