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IRFBF30PBF

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Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFBF30PBF

Vishay Intertech · MOSFETs · TO-220AB

IRFBF30PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, rated for VGS of ±20 V maximum with a gate-source threshold of 2.0 V to 4.0 V at 250 µA.
2 D passive Drain, rated for VDS of 900 V and continuous ID of 3.6 A at TC = 25 °C (2.3 A at 100 °C), with the case connected to drain per the junction-to-case (drain) thermal rating.
3 S passive Source of the N-channel MOSFET, carrying the continuous body-diode current IS of up to 3.6 A (14 A pulsed).

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 900 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS = 900 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 500 μA VDS = 720 V, VGS = 0 V, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 3.7 Ω VGS = 10 V, ID = 2.2 A 2
Forward Transconductance gfs 2.3 S VDS = 100 V, ID = 2.2 A 2
Total Gate Charge Qg 78 nC VGS = 10 V, ID = 3.6 A, VDS = 360 V 2
Gate-Source Charge Qgs 10 nC VGS = 10 V, ID = 3.6 A, VDS = 360 V 2
Gate-Drain Charge Qgd 42 nC VGS = 10 V, ID = 3.6 A, VDS = 360 V 2
Continuous Source-Drain Diode Current IS 3.6 A MOSFET symbol showing the integral reverse p-n junction diode 2
Pulsed Diode Forward Current ISM 14 A MOSFET symbol showing the integral reverse p-n junction diode 2
Body Diode Voltage VSD 1.8 V TJ = 25 °C, IS = 3.6 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 430 650 ns TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 1.4 2.1 μC TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μs 2
Drain-Source Voltage VDS 900 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID 3.6 A VGS at 10 V, TC = 25 °C 1
Continuous Drain Current ID 2.3 A VGS at 10 V, TC = 100 °C 1
Pulsed Drain Current IDM 14 A TC = 25 °C 1
Linear Derating Factor 1 W/°C TC = 25 °C 1
Single Pulse Avalanche Energy EAS 250 mJ VDD = 50 V, starting TJ = 25 °C, L = 36 mH, Rg = 25 Ω, IAS = 3.6 A 1
Repetitive Avalanche Current IAR 3.6 A TC = 25 °C 1
Repetitive Avalanche Energy EAR 13 mJ TC = 25 °C 1
Maximum Power Dissipation PD 125 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 1.5 V/ns ISD ≤ 3.6 A, dI/dt ≤ 70 A/μs, TJ ≤ 150 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s, 1.6 mm from case 1
Mounting Torque 10 lbf · in 6-32 or M3 screw 1
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 1 °C/W 2
Case-to-Sink, Flat, Greased Surface RthCS 0.5 °C/W 2
VDS Temperature Coefficient ΔVDS/ΔTJ 1.1 V/°C Reference to 25 °C, ID = 1 mA 2
Input Capacitance Ciss 1200 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Output Capacitance Coss 320 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 200 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Turn-On Delay Time td(on) 14 ns VDD = 450 V, ID = 3.6 A, Rg = 12 Ω, RD = 120 Ω 2
Rise Time tr 25 ns VDD = 450 V, ID = 3.6 A, Rg = 12 Ω, RD = 120 Ω 2
Turn-Off Delay Time td(off) 90 ns VDD = 450 V, ID = 3.6 A, Rg = 12 Ω, RD = 120 Ω 2
Fall Time tf 30 ns VDD = 450 V, ID = 3.6 A, Rg = 12 Ω, RD = 120 Ω 2
Internal Drain Inductance LD 4.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2
Internal Source Inductance LS 7.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2

CAD (KiCad official)

  • Symbol: IRFBF30PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfbf30pbf-etched.step / irfbf30pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfbf30pbf.step / irfbf30pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 9fd2ccb0537ba6de, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF