component
IRFB7537PBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRFB7537PBF
Infineon Technologies · MOSFETs · TO-220AB
IRFB7537PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; rated for ±20 V gate-to-source voltage, with a gate threshold of 2.1 V to 3.7 V at ID = 150 µA. |
| 2 | D | passive | Drain; 60 V minimum drain-to-source breakdown voltage and 173 A continuous drain current at TC = 25°C (VGS = 10 V). |
| 3 | S | passive | Source; body diode continuous source current is 173 A, and RDS(on) is 2.75 mΩ typ and 3.30 mΩ max at VGS = 10 V, ID = 100 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 2.75 | 3.3 | mΩ | VGS = 10V, ID = 100A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2.1 | 3.7 | V | VDS = VGS, ID = 150µA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS =60 V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current (125°C) | IDSS | 150 | µA | VDS =60V,VGS = 0V,TJ =125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 190 | S | VDS = 10V, ID =100A | 3 | ||
| Total Gate Charge | Qg | 142 | 210 | nC | ID = 100A, VDS = 30V, VGS = 10V | 3 | |
| Continuous Source Current | IS | 173 | A | MOSFET symbol (Body Diode) | 3 | ||
| Pulsed Source Current | ISM | 700 | A | MOSFET symbol (Body Diode) | 3 | ||
| Diode Forward Voltage | VSD | 1.2 | V | TJ = 25°C,IS = 100A,VGS = 0V | 3 | ||
| Continuous Drain Current | ID | 173 | A | TC = 25°C, VGS @ 10V | 2 | ||
| Continuous Drain Current | ID | 122 | A | TC = 100°C, VGS @ 10V | 2 | ||
| Pulsed Drain Current | IDM | 700 | A | 2 | |||
| Maximum Power Dissipation | PD | 230 | W | TC = 25°C | 2 | ||
| Linear Derating Factor | 1.5 | W/°C | 2 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | ± 20 V | 2 | |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 2 | ||
| Soldering Temperature | 300 | °C | for 10 seconds (1.6mm from case) | 2 | |||
| Single Pulse Avalanche Energy | EAS | 270 | mJ | L=54µH, RG = 50, IAS = 100A, VGS =10V | 2 | ||
| Single Pulse Avalanche Energy | EAS (L=1mH) | 554 | mJ | L = 1mH, RG = 50, IAS = 33A, VGS =10V | 2 | ||
| Junction-to-Case Thermal Resistance | RthJC | 0.65 | °C/W | 2 | |||
| Case-to-Sink Thermal Resistance | RthCS | 0.5 | °C/W | Flat Greased Surface | 2 | ||
| Junction-to-Ambient Thermal Resistance (TO-220) | RthJA | 62 | °C/W | TO-220 | 2 | ||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | 40 | mV/°C | Reference to 25°C, ID = 1mA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 3.5 | mΩ | VGS = 6.0V, ID = 50A | 2 | ||
| Gate Resistance | RG | 2 | Ω | 2 | |||
| Input Capacitance | Ciss | 7020 | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 3 | ||
| Output Capacitance | Coss | 640 | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 395 | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 3 |
CAD (KiCad official)
- Symbol:
IRFB7537PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irfb7537pbf-etched.step/irfb7537pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfb7537pbf.step/irfb7537pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (13 pp, sha256
1688b953fd5e3852, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFB7537PBF
**Infineon Technologies** · MOSFETs · TO-220AB
IRFB7537PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; rated for ±20 V gate-to-source voltage, with a gate threshold of 2.1 V to 3.7 V at ID = 150 µA. |
| 2 | D | passive | Drain; 60 V minimum drain-to-source breakdown voltage and 173 A continuous drain current at TC = 25°C (VGS = 10 V). |
| 3 | S | passive | Source; body diode continuous source current is 173 A, and RDS(on) is 2.75 mΩ typ and 3.30 mΩ max at VGS = 10 V, ID = 100 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS = 0V, ID = 250µA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 2.75 | 3.3 | mΩ | VGS = 10V, ID = 100A | 2 |
| Gate Threshold Voltage | VGS(th) | 2.1 | | 3.7 | V | VDS = VGS, ID = 150µA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | µA | VDS =60 V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current (125°C) | IDSS | | | 150 | µA | VDS =60V,VGS = 0V,TJ =125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | -100 | | | nA | VGS = -20V | 2 |
| Forward Transconductance | gfs | 190 | | | S | VDS = 10V, ID =100A | 3 |
| Total Gate Charge | Qg | | 142 | 210 | nC | ID = 100A, VDS = 30V, VGS = 10V | 3 |
| Continuous Source Current | IS | | | 173 | A | MOSFET symbol (Body Diode) | 3 |
| Pulsed Source Current | ISM | | | 700 | A | MOSFET symbol (Body Diode) | 3 |
| Diode Forward Voltage | VSD | | | 1.2 | V | TJ = 25°C,IS = 100A,VGS = 0V | 3 |
| Continuous Drain Current | ID | | | 173 | A | TC = 25°C, VGS @ 10V | 2 |
| Continuous Drain Current | ID | | | 122 | A | TC = 100°C, VGS @ 10V | 2 |
| Pulsed Drain Current | IDM | | | 700 | A | | 2 |
| Maximum Power Dissipation | PD | | | 230 | W | TC = 25°C | 2 |
| Linear Derating Factor | | | | 1.5 | W/°C | | 2 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | ± 20 V | 2 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 2 |
| Soldering Temperature | | | | 300 | °C | for 10 seconds (1.6mm from case) | 2 |
| Single Pulse Avalanche Energy | EAS | | | 270 | mJ | L=54µH, RG = 50, IAS = 100A, VGS =10V | 2 |
| Single Pulse Avalanche Energy | EAS (L=1mH) | | | 554 | mJ | L = 1mH, RG = 50, IAS = 33A, VGS =10V | 2 |
| Junction-to-Case Thermal Resistance | RthJC | | | 0.65 | °C/W | | 2 |
| Case-to-Sink Thermal Resistance | RthCS | | 0.5 | | °C/W | Flat Greased Surface | 2 |
| Junction-to-Ambient Thermal Resistance (TO-220) | RthJA | | | 62 | °C/W | TO-220 | 2 |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | | 40 | | mV/°C | Reference to 25°C, ID = 1mA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 3.5 | | mΩ | VGS = 6.0V, ID = 50A | 2 |
| Gate Resistance | RG | | 2 | | Ω | | 2 |
| Input Capacitance | Ciss | | 7020 | | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 3 |
| Output Capacitance | Coss | | 640 | | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 395 | | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 3 |
## CAD (KiCad official)
- Symbol: `IRFB7537PBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irfb7537pbf-etched.step` / `irfb7537pbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfb7537pbf.step` / `irfb7537pbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://www.infineon.com/dgdl/irfs7537pbf.pdf?fileId=5546d462533600a4015364c3ee2729cb) (13 pp, sha256 `1688b953fd5e3852`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfb7537pbf-datasheet.pdf)