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IRFB7537PBF

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Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFB7537PBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB7537PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; rated for ±20 V gate-to-source voltage, with a gate threshold of 2.1 V to 3.7 V at ID = 150 µA.
2 D passive Drain; 60 V minimum drain-to-source breakdown voltage and 173 A continuous drain current at TC = 25°C (VGS = 10 V).
3 S passive Source; body diode continuous source current is 173 A, and RDS(on) is 2.75 mΩ typ and 3.30 mΩ max at VGS = 10 V, ID = 100 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 2.75 3.3 mΩ VGS = 10V, ID = 100A 2
Gate Threshold Voltage VGS(th) 2.1 3.7 V VDS = VGS, ID = 150µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS =60 V, VGS = 0V 2
Drain-to-Source Leakage Current (125°C) IDSS 150 µA VDS =60V,VGS = 0V,TJ =125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 190 S VDS = 10V, ID =100A 3
Total Gate Charge Qg 142 210 nC ID = 100A, VDS = 30V, VGS = 10V 3
Continuous Source Current IS 173 A MOSFET symbol (Body Diode) 3
Pulsed Source Current ISM 700 A MOSFET symbol (Body Diode) 3
Diode Forward Voltage VSD 1.2 V TJ = 25°C,IS = 100A,VGS = 0V 3
Continuous Drain Current ID 173 A TC = 25°C, VGS @ 10V 2
Continuous Drain Current ID 122 A TC = 100°C, VGS @ 10V 2
Pulsed Drain Current IDM 700 A 2
Maximum Power Dissipation PD 230 W TC = 25°C 2
Linear Derating Factor 1.5 W/°C 2
Gate-to-Source Voltage VGS -20 20 V ± 20 V 2
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 2
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 2
Single Pulse Avalanche Energy EAS 270 mJ L=54µH, RG = 50, IAS = 100A, VGS =10V 2
Single Pulse Avalanche Energy EAS (L=1mH) 554 mJ L = 1mH, RG = 50, IAS = 33A, VGS =10V 2
Junction-to-Case Thermal Resistance RthJC 0.65 °C/W 2
Case-to-Sink Thermal Resistance RthCS 0.5 °C/W Flat Greased Surface 2
Junction-to-Ambient Thermal Resistance (TO-220) RthJA 62 °C/W TO-220 2
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/ΔTJ 40 mV/°C Reference to 25°C, ID = 1mA 2
Static Drain-to-Source On-Resistance RDS(on) 3.5 mΩ VGS = 6.0V, ID = 50A 2
Gate Resistance RG 2 Ω 2
Input Capacitance Ciss 7020 pF VGS = 0V, VDS = 25V, ƒ = 1.0MHz 3
Output Capacitance Coss 640 pF VGS = 0V, VDS = 25V, ƒ = 1.0MHz 3
Reverse Transfer Capacitance Crss 395 pF VGS = 0V, VDS = 25V, ƒ = 1.0MHz 3

CAD (KiCad official)

  • Symbol: IRFB7537PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb7537pbf-etched.step / irfb7537pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb7537pbf.step / irfb7537pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (13 pp, sha256 1688b953fd5e3852, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF