component
IRFB4310ZPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
IRFB4310ZPBF
Infineon Technologies · MOSFETs · TO-220-3
IRFB4310ZPBF from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the HEXFET; the datasheet limits gate-to-source voltage to ±20 V (absolute maximum rating). |
| 2 | D | passive | Drain terminal rated for VDSS 100 V, with continuous drain current of 127 A (silicon limited) at TC = 25°C and 120 A (package limited). |
| 3 | S | passive | Source terminal; the body diode is rated for 127 A continuous source current and 560 A pulsed source current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 4.8 | 6 | mΩ | VGS = 10V, ID = 75A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 150µA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 20 | µA | VDS = 100V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current (TJ = 125°C) | IDSS | 250 | µA | VDS = 80V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 150 | S | VDS = 50V, ID = 75A | 2 | ||
| Total Gate Charge | Qg | 120 | 170 | nC | ID = 75A, VDS = 50V, VGS = 10V | 2 | |
| Continuous Source Current (Body Diode) | IS | 127 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 560 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 75A, VGS = 0V | 2 | ||
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | 127 | A | TC = 25°C | 1 | ||
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | 90 | A | TC = 100°C | 1 | ||
| Continuous Drain Current, VGS @ 10V (Wire Bond Limited) | ID | 120 | A | TC = 25°C | 1 | ||
| Pulsed Drain Current | IDM | 560 | A | 1 | |||
| Maximum Power Dissipation | PD | 250 | W | TC = 25°C | 1 | ||
| Linear Derating Factor | 1.7 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 18 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | for 10 seconds (1.6mm from case) | 1 | |||
| Mounting Torque | 10 | lbin | 6-32 or M3 screw (printed as 1.1Nm) | 1 | |||
| Single Pulse Avalanche Energy (thermally limited) | EAS | 130 | mJ | See Fig. 14, 15, 22a, 22b | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.6 | °C/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62 | °C/W | When mounted on 1 inch square PCB (FR-4 or G-10 material) | 1 | ||
| Thermal Resistance, Case-to-Sink | RθCS | 0.5 | °C/W | Flat, greased surface | 1 | ||
| Breakdown Voltage Temperature Coefficient | ΔV(BR)DSS/ΔTJ | 0.11 | V/°C | Reference to 25°C, ID = 5mA | 2 |
CAD (KiCad official)
- Symbol:
IRFB4310ZPBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files:
irfb4310zpbf-etched.step/irfb4310zpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfb4310zpbf.step/irfb4310zpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
3d8039708ddbf2c2, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFB4310ZPBF
**Infineon Technologies** · MOSFETs · TO-220-3
IRFB4310ZPBF from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the HEXFET; the datasheet limits gate-to-source voltage to ±20 V (absolute maximum rating). |
| 2 | D | passive | Drain terminal rated for VDSS 100 V, with continuous drain current of 127 A (silicon limited) at TC = 25°C and 120 A (package limited). |
| 3 | S | passive | Source terminal; the body diode is rated for 127 A continuous source current and 560 A pulsed source current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 100 | | | V | VGS = 0V, ID = 250µA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 4.8 | 6 | mΩ | VGS = 10V, ID = 75A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 150µA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 20 | µA | VDS = 100V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current (TJ = 125°C) | IDSS | | | 250 | µA | VDS = 80V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -20V | 2 |
| Forward Transconductance | gfs | 150 | | | S | VDS = 50V, ID = 75A | 2 |
| Total Gate Charge | Qg | | 120 | 170 | nC | ID = 75A, VDS = 50V, VGS = 10V | 2 |
| Continuous Source Current (Body Diode) | IS | | | 127 | A | | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 560 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | TJ = 25°C, IS = 75A, VGS = 0V | 2 |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | | | 127 | A | TC = 25°C | 1 |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | | | 90 | A | TC = 100°C | 1 |
| Continuous Drain Current, VGS @ 10V (Wire Bond Limited) | ID | | | 120 | A | TC = 25°C | 1 |
| Pulsed Drain Current | IDM | | | 560 | A | | 1 |
| Maximum Power Dissipation | PD | | | 250 | W | TC = 25°C | 1 |
| Linear Derating Factor | | | | 1.7 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 18 | V/ns | | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |
| Soldering Temperature | | | | 300 | °C | for 10 seconds (1.6mm from case) | 1 |
| Mounting Torque | | | | 10 | lbin | 6-32 or M3 screw (printed as 1.1Nm) | 1 |
| Single Pulse Avalanche Energy (thermally limited) | EAS | | | 130 | mJ | See Fig. 14, 15, 22a, 22b | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | | 0.6 | °C/W | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 62 | °C/W | When mounted on 1 inch square PCB (FR-4 or G-10 material) | 1 |
| Thermal Resistance, Case-to-Sink | RθCS | | 0.5 | | °C/W | Flat, greased surface | 1 |
| Breakdown Voltage Temperature Coefficient | ΔV(BR)DSS/ΔTJ | | 0.11 | | V/°C | Reference to 25°C, ID = 5mA | 2 |
## CAD (KiCad official)
- Symbol: `IRFB4310ZPBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files: `irfb4310zpbf-etched.step` / `irfb4310zpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfb4310zpbf.step` / `irfb4310zpbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588887161919164416) (8 pp, sha256 `3d8039708ddbf2c2`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfb4310zpbf-datasheet.pdf)