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IRFB4310ZPBF

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Infineon Technologies MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFB4310ZPBF

Infineon Technologies · MOSFETs · TO-220-3

IRFB4310ZPBF from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the HEXFET; the datasheet limits gate-to-source voltage to ±20 V (absolute maximum rating).
2 D passive Drain terminal rated for VDSS 100 V, with continuous drain current of 127 A (silicon limited) at TC = 25°C and 120 A (package limited).
3 S passive Source terminal; the body diode is rated for 127 A continuous source current and 560 A pulsed source current.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 4.8 6 mΩ VGS = 10V, ID = 75A 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 150µA 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 100V, VGS = 0V 2
Drain-to-Source Leakage Current (TJ = 125°C) IDSS 250 µA VDS = 80V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 150 S VDS = 50V, ID = 75A 2
Total Gate Charge Qg 120 170 nC ID = 75A, VDS = 50V, VGS = 10V 2
Continuous Source Current (Body Diode) IS 127 A 2
Pulsed Source Current (Body Diode) ISM 560 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 75A, VGS = 0V 2
Continuous Drain Current, VGS @ 10V (Silicon Limited) ID 127 A TC = 25°C 1
Continuous Drain Current, VGS @ 10V (Silicon Limited) ID 90 A TC = 100°C 1
Continuous Drain Current, VGS @ 10V (Wire Bond Limited) ID 120 A TC = 25°C 1
Pulsed Drain Current IDM 560 A 1
Maximum Power Dissipation PD 250 W TC = 25°C 1
Linear Derating Factor 1.7 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Peak Diode Recovery dv/dt dv/dt 18 V/ns 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 1
Mounting Torque 10 lbin 6-32 or M3 screw (printed as 1.1Nm) 1
Single Pulse Avalanche Energy (thermally limited) EAS 130 mJ See Fig. 14, 15, 22a, 22b 1
Thermal Resistance, Junction-to-Case RθJC 0.6 °C/W 1
Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W When mounted on 1 inch square PCB (FR-4 or G-10 material) 1
Thermal Resistance, Case-to-Sink RθCS 0.5 °C/W Flat, greased surface 1
Breakdown Voltage Temperature Coefficient ΔV(BR)DSS/ΔTJ 0.11 V/°C Reference to 25°C, ID = 5mA 2

CAD (KiCad official)

  • Symbol: IRFB4310ZPBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: irfb4310zpbf-etched.step / irfb4310zpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb4310zpbf.step / irfb4310zpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 3d8039708ddbf2c2, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF