# IRFB4310Z

**UMW** · MOSFETs · TO-220

IRFB4310Z from UMW, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; gate-to-source voltage is rated ±20 V (VGS) per the absolute maximum ratings. |
| 2 | D | passive | DRAIN terminal; rated 120 A continuous drain current at VGS=10V (silicon limited, TC=25°C) with 100 V VDS. |
| 3 | S | passive | SOURCE terminal; reference for the gate-to-source voltage (±20 V max) and drain-to-source voltage of 100 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 100 |  |  | V | ID=250µA, VGS=0V | 3 |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ |  | 0.11 |  | V/°C | ID=5mA, Reference to 25°C | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  |  | 4.8 | mΩ | VGS=10V, ID=75A | 3 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS=VGS, ID=150µA | 3 |
| Gate-to-Source Forward Leakage | IGSS |  |  | 100 | nA | VGS=20V | 3 |
| Gate-to-Source Reverse Leakage | IGSS | -100 |  |  | nA | VGS=-20V | 3 |
| Drain-to-Source Leakage Current | IDSS |  | 20 | 250 | µA | VDS=80V, VGS=0V, TJ=125°C | 3 |
| Continuous Drain Current (Silicon Limited, TC=25°C) | ID |  |  | 127 | A | VGS=10V, TC=25°C | 1 |
| Continuous Drain Current (Silicon Limited, TC=100°C) | ID |  |  | 90 | A | VGS=10V, TC=100°C | 1 |
| Continuous Drain Current (Wire Bond Limited) | ID |  |  | 120 | A | VGS=10V, TC=25°C | 1 |
| Pulsed Drain Current | IDM |  |  | 560 | A | TC=25°C | 1 |
| Maximum Power Dissipation | PD |  |  | 250 | W | TC=25°C | 1 |
| Linear Derating Factor | PD |  |  | 1.7 | W/°C |  | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Peak Diode Recovery | dv/dt |  |  | 18 | V/ns |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 175 | °C |  | 1 |
| Soldering Temperature, for 10 seconds (1.6mm from case) |  |  |  | 300 | °C | 1.6mm from case, 10 seconds | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 130 | mJ | Thermally limited | 2 |
| Junction-to-Case Thermal Resistance | RθJC |  |  | 0.6 | °C/W |  | 2 |
| Case-to-Sink Thermal Resistance, Flat Greased Surface | RθCS |  | 0.5 |  | °C/W | Flat, greased surface | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA |  |  | 62 | °C/W |  | 2 |

## CAD (KiCad official)

- Symbol: `IRFB4310Z`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `irfb4310z-etched.step` / `irfb4310z-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfb4310z.step` / `irfb4310z.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](docs/irfb4310z-datasheet.pdf) (14 pp, sha256 `0fe2143650df90c3`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irfb4310z-datasheet.pdf)