component
IRFB4310Z
Public Made by Adomby adom
UMW MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRFB4310Z
UMW · MOSFETs · TO-220
IRFB4310Z from UMW, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; gate-to-source voltage is rated ±20 V (VGS) per the absolute maximum ratings. |
| 2 | D | passive | DRAIN terminal; rated 120 A continuous drain current at VGS=10V (silicon limited, TC=25°C) with 100 V VDS. |
| 3 | S | passive | SOURCE terminal; reference for the gate-to-source voltage (±20 V max) and drain-to-source voltage of 100 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 100 | V | ID=250µA, VGS=0V | 3 | ||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | 0.11 | V/°C | ID=5mA, Reference to 25°C | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 4.8 | mΩ | VGS=10V, ID=75A | 3 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=150µA | 3 | |
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 20 | 250 | µA | VDS=80V, VGS=0V, TJ=125°C | 3 | |
| Continuous Drain Current (Silicon Limited, TC=25°C) | ID | 127 | A | VGS=10V, TC=25°C | 1 | ||
| Continuous Drain Current (Silicon Limited, TC=100°C) | ID | 90 | A | VGS=10V, TC=100°C | 1 | ||
| Continuous Drain Current (Wire Bond Limited) | ID | 120 | A | VGS=10V, TC=25°C | 1 | ||
| Pulsed Drain Current | IDM | 560 | A | TC=25°C | 1 | ||
| Maximum Power Dissipation | PD | 250 | W | TC=25°C | 1 | ||
| Linear Derating Factor | PD | 1.7 | W/°C | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Peak Diode Recovery | dv/dt | 18 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature, for 10 seconds (1.6mm from case) | 300 | °C | 1.6mm from case, 10 seconds | 1 | |||
| Single Pulse Avalanche Energy | EAS | 130 | mJ | Thermally limited | 2 | ||
| Junction-to-Case Thermal Resistance | RθJC | 0.6 | °C/W | 2 | |||
| Case-to-Sink Thermal Resistance, Flat Greased Surface | RθCS | 0.5 | °C/W | Flat, greased surface | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 62 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
IRFB4310Z - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
irfb4310z-etched.step/irfb4310z-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfb4310z.step/irfb4310z.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (14 pp, sha256
0fe2143650df90c3, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).