component
IRFB3307PBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRFB3307PBF
Infineon Technologies · MOSFETs · TO-220AB
IRFB3307PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20V max and threshold VGS(th) of 2.0V to 4.0V. |
| 2 | D | passive | Drain; connected to the tab, rated VDSS 75V with continuous drain current of 120A at TC = 25°C (package limited to 75A). |
| 3 | S | passive | Source; power return of the N-channel HEXFET, with body diode continuous source current IS of 130A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 75 | V | VGS = 0V, ID = 250μA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 5 | 6.3 | mΩ | VGS = 10V, ID = 75A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 150μA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 20 | μA | VDS = 75V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current (125°C) | IDSS | 250 | μA | VDS = 75V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 200 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -200 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 98 | S | VDS = 50V, ID = 75A | 2 | ||
| Total Gate Charge | Qg | 120 | 180 | nC | ID = 75A | 2 | |
| Continuous Source Current (Body Diode) | IS | 130 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 510 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 75A, VGS = 0V | 2 | ||
| Reverse Recovery Time (25°C) | trr | 38 | 57 | ns | TJ = 25°C, VR = 64V, IF = 75A | 2 | |
| Reverse Recovery Time (125°C) | trr | 46 | 69 | ns | TJ = 125°C, VR = 64V, IF = 75A | 2 | |
| Reverse Recovery Charge (25°C) | Qrr | 65 | 98 | nC | TJ = 25°C, di/dt = 100A/μs | 2 | |
| Reverse Recovery Charge (125°C) | Qrr | 86 | 130 | nC | TJ = 125°C, di/dt = 100A/μs | 2 | |
| Continuous Drain Current | ID | 120 | A | TC = 25°C, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 84 | A | TC = 100°C, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 510 | A | 1 | |||
| Maximum Power Dissipation | PD | 270 | W | TC = 25°C | 1 | ||
| Linear Derating Factor | 1.3 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | for 10 seconds (1.6mm from case) | 1 | |||
| Single Pulse Avalanche Energy | EAS | 200 | mJ | Thermally limited | 1 | ||
| Junction-to-Case Thermal Resistance | RθJC | 0.61 | °C/W | 1 | |||
| Junction-to-Ambient Thermal Resistance, TO-220 | RθJA | 62 | °C/W | 1 | |||
| Case-to-Sink Thermal Resistance | RθCS | 0.5 | °C/W | Flat Greased Surface, TO-220 | 1 | ||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | 0.069 | V/°C | Reference to 25°C, ID = 1mA | 2 | ||
| Gate Input Resistance | RG | 1.5 | Ω | f = 1MHz, open drain | 2 | ||
| Input Capacitance | Ciss | 5150 | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 460 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 250 | pF | 2 |
CAD (KiCad official)
- Symbol:
IRFB3307PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irfb3307pbf-etched.step/irfb3307pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfb3307pbf.step/irfb3307pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (12 pp, sha256
c9540655a117515e, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFB3307PBF
**Infineon Technologies** · MOSFETs · TO-220AB
IRFB3307PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20V max and threshold VGS(th) of 2.0V to 4.0V. |
| 2 | D | passive | Drain; connected to the tab, rated VDSS 75V with continuous drain current of 120A at TC = 25°C (package limited to 75A). |
| 3 | S | passive | Source; power return of the N-channel HEXFET, with body diode continuous source current IS of 130A max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 75 | | | V | VGS = 0V, ID = 250μA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 5 | 6.3 | mΩ | VGS = 10V, ID = 75A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 150μA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 20 | μA | VDS = 75V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current (125°C) | IDSS | | | 250 | μA | VDS = 75V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 200 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -200 | nA | VGS = -20V | 2 |
| Forward Transconductance | gfs | 98 | | | S | VDS = 50V, ID = 75A | 2 |
| Total Gate Charge | Qg | | 120 | 180 | nC | ID = 75A | 2 |
| Continuous Source Current (Body Diode) | IS | | | 130 | A | | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 510 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | TJ = 25°C, IS = 75A, VGS = 0V | 2 |
| Reverse Recovery Time (25°C) | trr | | 38 | 57 | ns | TJ = 25°C, VR = 64V, IF = 75A | 2 |
| Reverse Recovery Time (125°C) | trr | | 46 | 69 | ns | TJ = 125°C, VR = 64V, IF = 75A | 2 |
| Reverse Recovery Charge (25°C) | Qrr | | 65 | 98 | nC | TJ = 25°C, di/dt = 100A/μs | 2 |
| Reverse Recovery Charge (125°C) | Qrr | | 86 | 130 | nC | TJ = 125°C, di/dt = 100A/μs | 2 |
| Continuous Drain Current | ID | | | 120 | A | TC = 25°C, VGS @ 10V | 1 |
| Continuous Drain Current | ID | | | 84 | A | TC = 100°C, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 510 | A | | 1 |
| Maximum Power Dissipation | PD | | | 270 | W | TC = 25°C | 1 |
| Linear Derating Factor | | | | 1.3 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |
| Soldering Temperature | | | | 300 | °C | for 10 seconds (1.6mm from case) | 1 |
| Single Pulse Avalanche Energy | EAS | | | 200 | mJ | Thermally limited | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | | 0.61 | °C/W | | 1 |
| Junction-to-Ambient Thermal Resistance, TO-220 | RθJA | | | 62 | °C/W | | 1 |
| Case-to-Sink Thermal Resistance | RθCS | | 0.5 | | °C/W | Flat Greased Surface, TO-220 | 1 |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | | 0.069 | | V/°C | Reference to 25°C, ID = 1mA | 2 |
| Gate Input Resistance | RG | | 1.5 | | Ω | f = 1MHz, open drain | 2 |
| Input Capacitance | Ciss | | 5150 | | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 460 | | pF | | 2 |
| Reverse Transfer Capacitance | Crss | | 250 | | pF | | 2 |
## CAD (KiCad official)
- Symbol: `IRFB3307PBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irfb3307pbf-etched.step` / `irfb3307pbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfb3307pbf.step` / `irfb3307pbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://www.infineon.com/dgdl/irfs3307pbf.pdf?fileId=5546d462533600a40153563689292169) (12 pp, sha256 `c9540655a117515e`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfb3307pbf-datasheet.pdf)