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IRFB3307PBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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IRFB3307PBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB3307PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20V max and threshold VGS(th) of 2.0V to 4.0V.
2 D passive Drain; connected to the tab, rated VDSS 75V with continuous drain current of 120A at TC = 25°C (package limited to 75A).
3 S passive Source; power return of the N-channel HEXFET, with body diode continuous source current IS of 130A max.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 75 V VGS = 0V, ID = 250μA 2
Static Drain-to-Source On-Resistance RDS(on) 5 6.3 mΩ VGS = 10V, ID = 75A 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 150μA 2
Drain-to-Source Leakage Current IDSS 20 μA VDS = 75V, VGS = 0V 2
Drain-to-Source Leakage Current (125°C) IDSS 250 μA VDS = 75V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 200 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -200 nA VGS = -20V 2
Forward Transconductance gfs 98 S VDS = 50V, ID = 75A 2
Total Gate Charge Qg 120 180 nC ID = 75A 2
Continuous Source Current (Body Diode) IS 130 A 2
Pulsed Source Current (Body Diode) ISM 510 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 75A, VGS = 0V 2
Reverse Recovery Time (25°C) trr 38 57 ns TJ = 25°C, VR = 64V, IF = 75A 2
Reverse Recovery Time (125°C) trr 46 69 ns TJ = 125°C, VR = 64V, IF = 75A 2
Reverse Recovery Charge (25°C) Qrr 65 98 nC TJ = 25°C, di/dt = 100A/μs 2
Reverse Recovery Charge (125°C) Qrr 86 130 nC TJ = 125°C, di/dt = 100A/μs 2
Continuous Drain Current ID 120 A TC = 25°C, VGS @ 10V 1
Continuous Drain Current ID 84 A TC = 100°C, VGS @ 10V 1
Pulsed Drain Current IDM 510 A 1
Maximum Power Dissipation PD 270 W TC = 25°C 1
Linear Derating Factor 1.3 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 1
Single Pulse Avalanche Energy EAS 200 mJ Thermally limited 1
Junction-to-Case Thermal Resistance RθJC 0.61 °C/W 1
Junction-to-Ambient Thermal Resistance, TO-220 RθJA 62 °C/W 1
Case-to-Sink Thermal Resistance RθCS 0.5 °C/W Flat Greased Surface, TO-220 1
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/ΔTJ 0.069 V/°C Reference to 25°C, ID = 1mA 2
Gate Input Resistance RG 1.5 Ω f = 1MHz, open drain 2
Input Capacitance Ciss 5150 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Output Capacitance Coss 460 pF 2
Reverse Transfer Capacitance Crss 250 pF 2

CAD (KiCad official)

  • Symbol: IRFB3307PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb3307pbf-etched.step / irfb3307pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb3307pbf.step / irfb3307pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (12 pp, sha256 c9540655a117515e, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF