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Generated by kicad-footprint-generator · KiCad file format 20260206

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IRFB3206PBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB3206PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; HEXFET lead assignment 1 on the TO-220AB, with VGS limited to ±20 V and a gate threshold of 2.0 V min to 4.0 V max at ID = 150 μA.
2	D	passive	Drain; HEXFET lead assignment 2, also connected to the tab, with V(BR)DSS of 60 V min and ID of 210 A silicon limited (120 A package limited).
3	S	passive	Source; HEXFET lead assignment 3, carrying the body diode continuous source current of up to 210 A.

Key specifications

Parameter	Value
Manufacturer	Infineon Technologies
Package	TO-220AB
Category	Transistors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Continuous Drain Current, Silicon Limited	ID			210	A	TC = 25°C, VGS @ 10V (Silicon Limited)	1
Continuous Drain Current, Silicon Limited	ID			150	A	TC = 100°C, VGS @ 10V (Silicon Limited)	1
Continuous Drain Current, Wire Bond Limited	ID			120	A	TC = 25°C, VGS @ 10V (Wire Bond Limited)	1
Pulsed Drain Current	IDM			840	A	Repetitive rating; pulse width limited by max. junction temperature	1
Maximum Power Dissipation	PD			300	W	TC = 25°C	1
Linear Derating Factor				2	W/°C		1
Gate-to-Source Voltage	VGS	-20		20	V		1
Peak Diode Recovery dv/dt	dv/dt			5	V/ns	ISD ≤ 75A, di/dt ≤ 360A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C	2
Operating Junction and Storage Temperature Range	TJ, TSTG	-55		175	°C		1
Soldering Temperature				300	°C	10 seconds, 1.6mm from case	1
Single Pulse Avalanche Energy (thermally limited)	EAS			170	mJ	Thermally limited, single pulse	1
Repetitive Avalanche Energy	EAR			300	mJ		1
Junction-to-Case	RθJC			0.5	°C/W		1
Case-to-Sink, Flat Greased Surface, TO-220	RθCS		0.5		°C/W	Flat greased surface, TO-220	1
Junction-to-Ambient, TO-220	RθJA			62	°C/W		1
Drain-to-Source Breakdown Voltage	V(BR)DSS	60			V	VGS = 0V, ID = 250μA	2
Breakdown Voltage Temp. Coefficient	ΔV(BR)DSS/ΔTJ		0.07		V/°C	Reference to 25°C, ID = 5mA	2
Static Drain-to-Source On-Resistance	RDS(on)		2.4	3	mΩ	VGS = 10V, ID = 75A	2
Gate Threshold Voltage	VGS(th)	2		4	V	VDS = VGS, ID = 150μA	2
Drain-to-Source Leakage Current	IDSS			20	μA	VDS = 60V, VGS = 0V	2
Drain-to-Source Leakage Current	IDSS			250	μA	VDS = 48V, VGS = 0V, TJ = 125°C	2
Gate-to-Source Forward Leakage	IGSS			100	nA	VGS = 20V	2
Gate-to-Source Reverse Leakage	IGSS			-100	nA	VGS = -20V	2
Forward Transconductance	gfs	210			S	VDS = 50V, ID = 75A	2
Total Gate Charge	Qg		120	170	nC	ID = 75A, VDS = 30V, VGS = 10V	2
Diode Forward Voltage	VSD			1.3	V	TJ = 25°C, IS = 75A, VGS = 0V	2
Continuous Source Current (Body Diode)	IS			210	A		2
Pulsed Source Current (Body Diode)	ISM			840	A		2
Reverse Recovery Time	trr		33	50	ns	TJ = 25°C, VR = 51V, IF = 75A	2
Reverse Recovery Time	trr		37	56	ns	TJ = 125°C, VR = 51V, IF = 75A	2
Reverse Recovery Charge	Qrr		41	62	nC	TJ = 25°C, di/dt = 100A/μs	2
Reverse Recovery Charge	Qrr		53	80	nC	TJ = 125°C, di/dt = 100A/μs	2
Internal Gate Resistance	RG		0.7		Ω		2
Total Gate Charge Sync. (Qg - Qgd)	Qsync		85		nC	ID = 75A, VDS = 30V, VGS = 10V	2
Gate-to-Source Charge	Qgs		29		nC	ID = 75A, VDS = 30V, VGS = 10V	2
Gate-to-Drain (Miller) Charge	Qgd		35		nC	ID = 75A, VDS = 30V, VGS = 10V	2
Turn-On Delay Time	td(on)		19		ns	ID = 75A, RG = 2.7Ω, VGS = 10V, VDD = 30V	2
Rise Time	tr		82		ns	ID = 75A, RG = 2.7Ω, VGS = 10V, VDD = 30V	2
Turn-Off Delay Time	td(off)		55		ns	ID = 75A, RG = 2.7Ω, VGS = 10V, VDD = 30V	2
Fall Time	tf		83		ns	ID = 75A, RG = 2.7Ω, VGS = 10V, VDD = 30V	2
Input Capacitance	Ciss		6540		pF	VGS = 0V, VDS = 50V, ƒ = 1.0MHz, See Fig.5	2
Output Capacitance	Coss		720		pF	VGS = 0V, VDS = 50V, ƒ = 1.0MHz, See Fig.5	2
Reverse Transfer Capacitance	Crss		360		pF	VGS = 0V, VDS = 50V, ƒ = 1.0MHz, See Fig.5	2
Effective Output Capacitance (Energy Related)	Coss eff. (ER)		1040		pF	VGS = 0V, VDS = 0V to 48V, See Fig.11	2
Effective Output Capacitance (Time Related)	Coss eff. (TR)		1230		pF	VGS = 0V, VDS = 0V to 48V	2
Reverse Recovery Current	IRRM		2.1		A	TJ = 25°C	2

CAD (KiCad official)

Symbol: IRFB3206PBF
Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
3D model: TO-220AB (KiCad packages3D, STEP)
3D model files: irfb3206pbf-etched.step / irfb3206pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb3206pbf.step / irfb3206pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Infineon Technologies datasheet (13 pp, sha256 69c86e7b86377395, retrieved 2026-10-21, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF