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IRFB3206PBF

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Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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IRFB3206PBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB3206PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; HEXFET lead assignment 1 on the TO-220AB, with VGS limited to ±20 V and a gate threshold of 2.0 V min to 4.0 V max at ID = 150 μA.
2 D passive Drain; HEXFET lead assignment 2, also connected to the tab, with V(BR)DSS of 60 V min and ID of 210 A silicon limited (120 A package limited).
3 S passive Source; HEXFET lead assignment 3, carrying the body diode continuous source current of up to 210 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Drain Current, Silicon Limited ID 210 A TC = 25°C, VGS @ 10V (Silicon Limited) 1
Continuous Drain Current, Silicon Limited ID 150 A TC = 100°C, VGS @ 10V (Silicon Limited) 1
Continuous Drain Current, Wire Bond Limited ID 120 A TC = 25°C, VGS @ 10V (Wire Bond Limited) 1
Pulsed Drain Current IDM 840 A Repetitive rating; pulse width limited by max. junction temperature 1
Maximum Power Dissipation PD 300 W TC = 25°C 1
Linear Derating Factor 2 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns ISD ≤ 75A, di/dt ≤ 360A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 2
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Soldering Temperature 300 °C 10 seconds, 1.6mm from case 1
Single Pulse Avalanche Energy (thermally limited) EAS 170 mJ Thermally limited, single pulse 1
Repetitive Avalanche Energy EAR 300 mJ 1
Junction-to-Case RθJC 0.5 °C/W 1
Case-to-Sink, Flat Greased Surface, TO-220 RθCS 0.5 °C/W Flat greased surface, TO-220 1
Junction-to-Ambient, TO-220 RθJA 62 °C/W 1
Drain-to-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0V, ID = 250μA 2
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/ΔTJ 0.07 V/°C Reference to 25°C, ID = 5mA 2
Static Drain-to-Source On-Resistance RDS(on) 2.4 3 mΩ VGS = 10V, ID = 75A 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 150μA 2
Drain-to-Source Leakage Current IDSS 20 μA VDS = 60V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 μA VDS = 48V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 210 S VDS = 50V, ID = 75A 2
Total Gate Charge Qg 120 170 nC ID = 75A, VDS = 30V, VGS = 10V 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 75A, VGS = 0V 2
Continuous Source Current (Body Diode) IS 210 A 2
Pulsed Source Current (Body Diode) ISM 840 A 2
Reverse Recovery Time trr 33 50 ns TJ = 25°C, VR = 51V, IF = 75A 2
Reverse Recovery Time trr 37 56 ns TJ = 125°C, VR = 51V, IF = 75A 2
Reverse Recovery Charge Qrr 41 62 nC TJ = 25°C, di/dt = 100A/μs 2
Reverse Recovery Charge Qrr 53 80 nC TJ = 125°C, di/dt = 100A/μs 2
Internal Gate Resistance RG 0.7 Ω 2
Total Gate Charge Sync. (Qg - Qgd) Qsync 85 nC ID = 75A, VDS = 30V, VGS = 10V 2
Gate-to-Source Charge Qgs 29 nC ID = 75A, VDS = 30V, VGS = 10V 2
Gate-to-Drain (Miller) Charge Qgd 35 nC ID = 75A, VDS = 30V, VGS = 10V 2
Turn-On Delay Time td(on) 19 ns ID = 75A, RG = 2.7Ω, VGS = 10V, VDD = 30V 2
Rise Time tr 82 ns ID = 75A, RG = 2.7Ω, VGS = 10V, VDD = 30V 2
Turn-Off Delay Time td(off) 55 ns ID = 75A, RG = 2.7Ω, VGS = 10V, VDD = 30V 2
Fall Time tf 83 ns ID = 75A, RG = 2.7Ω, VGS = 10V, VDD = 30V 2
Input Capacitance Ciss 6540 pF VGS = 0V, VDS = 50V, ƒ = 1.0MHz, See Fig.5 2
Output Capacitance Coss 720 pF VGS = 0V, VDS = 50V, ƒ = 1.0MHz, See Fig.5 2
Reverse Transfer Capacitance Crss 360 pF VGS = 0V, VDS = 50V, ƒ = 1.0MHz, See Fig.5 2
Effective Output Capacitance (Energy Related) Coss eff. (ER) 1040 pF VGS = 0V, VDS = 0V to 48V, See Fig.11 2
Effective Output Capacitance (Time Related) Coss eff. (TR) 1230 pF VGS = 0V, VDS = 0V to 48V 2
Reverse Recovery Current IRRM 2.1 A TJ = 25°C 2

CAD (KiCad official)

  • Symbol: IRFB3206PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb3206pbf-etched.step / irfb3206pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb3206pbf.step / irfb3206pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (13 pp, sha256 69c86e7b86377395, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF