# IRFB18N50KPBF

**Vishay Intertech** · MOSFETs · TO-220

IRFB18N50KPBF from Vishay Intertech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; rated for VGS ±30 V maximum with a threshold of 3.0 V to 5.0 V at ID = 250 μA and total gate charge of 120 nC max. |
| 2 | D | passive | Drain; rated for VDS 500 V, continuous ID 17 A at TC = 25 °C (11 A at 100 °C) and pulsed IDM 68 A, and the case/tab is the drain per the junction-to-case thermal rating. |
| 3 | S | passive | Source; carries the body-diode continuous current IS of 17 A and pulsed ISM of 68 A, with RDS(on) 0.26 Ω typical at VGS = 10 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | VDS | 500 |  |  | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-source threshold voltage | VGS(th) | 3 |  | 5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-source leakage | IGSS | -100 |  | 100 | nA | VGS = ± 30 V | 2 |
| Zero gate voltage drain current | IDSS |  |  | 50 | μA | VDS = 500 V, VGS = 0 V | 2 |
| Zero gate voltage drain current | IDSS |  |  | 250 | μA | VDS = 400 V, VGS = 0 V, TJ = 125 °C | 2 |
| Drain-source on-state resistance | RDS(on) |  | 0.26 | 0.29 | Ω | VGS = 10 V, ID = 10 A | 2 |
| Forward transconductance | gfs | 6.4 |  |  | S | VDS = 50 V, ID = 10 A | 2 |
| Total gate charge | Qg |  |  | 120 | nC | VGS = 10 V, ID = 17 A, VDS = 400 V | 2 |
| Gate-source charge | Qgs |  |  | 34 | nC | VGS = 10 V, ID = 17 A, VDS = 400 V | 2 |
| Gate-drain charge | Qgd |  |  | 54 | nC | VGS = 10 V, ID = 17 A, VDS = 400 V | 2 |
| Gate input resistance | Rg | 0.7 |  | 2.7 | Ω | f = 1 MHz, open drain | 2 |
| Continuous source-drain diode current | IS |  |  | 17 | A |  | 2 |
| Pulsed diode forward current | ISM |  |  | 68 | A |  | 2 |
| Body diode voltage | VSD |  |  | 1.5 | V | TJ = 25 °C, IS = 17 A, VGS = 0 V | 2 |
| Body diode reverse recovery time | trr |  | 520 | 780 | ns | TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs | 2 |
| Body diode reverse recovery charge | Qrr |  | 5.3 | 8 | μC | TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs | 2 |
| Maximum junction-to-ambient | RthJA |  |  | 58 | °C/W |  | 2 |
| Maximum junction-to-case (drain) | RthJC |  |  | 0.56 | °C/W |  | 2 |
| Case-to-sink, flat, greased surface | RthCS |  | 0.5 |  | °C/W |  | 2 |
| Drain-source voltage | VDS |  |  | 500 | V | TC = 25 °C | 1 |
| Gate-source voltage | VGS | -30 |  | 30 | V | TC = 25 °C | 1 |
| Continuous drain current | ID |  |  | 17 | A | VGS at 10 V, TC = 25 °C | 1 |
| Continuous drain current | ID |  |  | 11 | A | VGS at 10 V, TC = 100 °C | 1 |
| Pulsed drain current | IDM |  |  | 68 | A |  | 1 |
| Linear derating factor |  |  |  | 1.8 | W/°C |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 370 | mJ | Starting TJ = 25 °C, L = 2.5 mH, RG = 25 Ω, IAS = 17 A | 1 |
| Repetitive avalanche current | IAR |  |  | 17 | A |  | 1 |
| Repetitive avalanche energy | EAR |  |  | 22 | mJ |  | 1 |
| Maximum power dissipation | PD |  |  | 220 | W | TC = 25 °C | 1 |
| Peak diode recovery dV/dt | dV/dt |  |  | 7.8 | V/ns | ISD ≤ 17 A, dI/dt ≤ 376 A/μs, VDD ≤ VDS, TJ ≤ 150 °C | 1 |
| Operating junction and storage temperature range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering recommendations (peak temperature) |  |  |  | 300 | °C | For 10 s, 1.6 mm from case | 1 |
| Mounting torque |  |  |  | 10 | N | 6-32 or M3 screw | 1 |
| VDS temperature coefficient | ΔVDS/TJ |  | 0.59 |  | V/°C | Reference to 25 °C, ID = 1 mA | 2 |
| Input capacitance | Ciss |  | 2830 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Output capacitance | Coss |  | 330 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Reverse transfer capacitance | Crss |  | 38 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Output capacitance | Coss |  | 3310 |  | pF | VGS = 0 V, VDS = 1.0 V, f = 1.0 MHz | 2 |
| Output capacitance | Coss |  | 93 |  | pF | VGS = 0 V, VDS = 400 V, f = 1.0 MHz | 2 |
| Effective output capacitance | Coss eff. |  | 155 |  | pF | VDS = 0 V to 400 V | 2 |
| Turn-on delay time | td(on) |  | 22 |  | ns | VDD = 250 V, ID = 17 A, RG = 7.5 Ω | 2 |
| Rise time | tr |  | 60 |  | ns | VDD = 250 V, ID = 17 A, RG = 7.5 Ω | 2 |
| Turn-off delay time | td(off) |  | 45 |  | ns | VDD = 250 V, ID = 17 A, RG = 7.5 Ω | 2 |
| Fall time | tf |  | 30 |  | ns | VDD = 250 V, ID = 17 A, RG = 7.5 Ω | 2 |

## CAD (KiCad official)

- Symbol: `IRFB18N50KPBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `irfb18n50kpbf-etched.step` / `irfb18n50kpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfb18n50kpbf.step` / `irfb18n50kpbf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Vishay Intertech datasheet](docs/irfb18n50kpbf-datasheet.pdf) (9 pp, sha256 `b8aa87ee5e9f9f7f`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irfb18n50kpbf-datasheet.pdf)