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IRFB18N50KPBF

Public Made by Adom

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Vishay Intertech MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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IRFB18N50KPBF

Vishay Intertech · MOSFETs · TO-220

IRFB18N50KPBF from Vishay Intertech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; rated for VGS ±30 V maximum with a threshold of 3.0 V to 5.0 V at ID = 250 μA and total gate charge of 120 nC max.
2 D passive Drain; rated for VDS 500 V, continuous ID 17 A at TC = 25 °C (11 A at 100 °C) and pulsed IDM 68 A, and the case/tab is the drain per the junction-to-case thermal rating.
3 S passive Source; carries the body-diode continuous current IS of 17 A and pulsed ISM of 68 A, with RDS(on) 0.26 Ω typical at VGS = 10 V.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage VDS 500 V VGS = 0 V, ID = 250 μA 2
Gate-source threshold voltage VGS(th) 3 5 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS -100 100 nA VGS = ± 30 V 2
Zero gate voltage drain current IDSS 50 μA VDS = 500 V, VGS = 0 V 2
Zero gate voltage drain current IDSS 250 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C 2
Drain-source on-state resistance RDS(on) 0.26 0.29 Ω VGS = 10 V, ID = 10 A 2
Forward transconductance gfs 6.4 S VDS = 50 V, ID = 10 A 2
Total gate charge Qg 120 nC VGS = 10 V, ID = 17 A, VDS = 400 V 2
Gate-source charge Qgs 34 nC VGS = 10 V, ID = 17 A, VDS = 400 V 2
Gate-drain charge Qgd 54 nC VGS = 10 V, ID = 17 A, VDS = 400 V 2
Gate input resistance Rg 0.7 2.7 Ω f = 1 MHz, open drain 2
Continuous source-drain diode current IS 17 A 2
Pulsed diode forward current ISM 68 A 2
Body diode voltage VSD 1.5 V TJ = 25 °C, IS = 17 A, VGS = 0 V 2
Body diode reverse recovery time trr 520 780 ns TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs 2
Body diode reverse recovery charge Qrr 5.3 8 μC TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs 2
Maximum junction-to-ambient RthJA 58 °C/W 2
Maximum junction-to-case (drain) RthJC 0.56 °C/W 2
Case-to-sink, flat, greased surface RthCS 0.5 °C/W 2
Drain-source voltage VDS 500 V TC = 25 °C 1
Gate-source voltage VGS -30 30 V TC = 25 °C 1
Continuous drain current ID 17 A VGS at 10 V, TC = 25 °C 1
Continuous drain current ID 11 A VGS at 10 V, TC = 100 °C 1
Pulsed drain current IDM 68 A 1
Linear derating factor 1.8 W/°C 1
Single pulse avalanche energy EAS 370 mJ Starting TJ = 25 °C, L = 2.5 mH, RG = 25 Ω, IAS = 17 A 1
Repetitive avalanche current IAR 17 A 1
Repetitive avalanche energy EAR 22 mJ 1
Maximum power dissipation PD 220 W TC = 25 °C 1
Peak diode recovery dV/dt dV/dt 7.8 V/ns ISD ≤ 17 A, dI/dt ≤ 376 A/μs, VDD ≤ VDS, TJ ≤ 150 °C 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Soldering recommendations (peak temperature) 300 °C For 10 s, 1.6 mm from case 1
Mounting torque 10 N 6-32 or M3 screw 1
VDS temperature coefficient ΔVDS/TJ 0.59 V/°C Reference to 25 °C, ID = 1 mA 2
Input capacitance Ciss 2830 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Output capacitance Coss 330 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Reverse transfer capacitance Crss 38 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Output capacitance Coss 3310 pF VGS = 0 V, VDS = 1.0 V, f = 1.0 MHz 2
Output capacitance Coss 93 pF VGS = 0 V, VDS = 400 V, f = 1.0 MHz 2
Effective output capacitance Coss eff. 155 pF VDS = 0 V to 400 V 2
Turn-on delay time td(on) 22 ns VDD = 250 V, ID = 17 A, RG = 7.5 Ω 2
Rise time tr 60 ns VDD = 250 V, ID = 17 A, RG = 7.5 Ω 2
Turn-off delay time td(off) 45 ns VDD = 250 V, ID = 17 A, RG = 7.5 Ω 2
Fall time tf 30 ns VDD = 250 V, ID = 17 A, RG = 7.5 Ω 2

CAD (KiCad official)

  • Symbol: IRFB18N50KPBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: irfb18n50kpbf-etched.step / irfb18n50kpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb18n50kpbf.step / irfb18n50kpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 b8aa87ee5e9f9f7f, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF