# IRFB13N50APBF

**Vishay Intertech** · MOSFETs · TO-220AB

IRFB13N50APBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is limited to ±30 V (VGS ±30 V absolute maximum). |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for 500 V drain-source voltage and 14 A continuous drain current at TC = 25 °C; the datasheet's junction-to-case thermal resistance is specified to the drain. |
| 3 | S | passive | Source of the N-channel MOSFET; the integral body diode is rated for 14 A continuous and 56 A pulsed forward current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | 500 | V |  | 1 |
| Gate-source voltage | VGS | -30 |  | 30 | V |  | 1 |
| Continuous drain current, TC = 25 °C | ID |  |  | 14 | A | VGS at 10 V, TC = 25 °C | 1 |
| Continuous drain current, TC = 100 °C | ID |  |  | 9.1 | A | VGS at 10 V, TC = 100 °C | 1 |
| Pulsed drain current | IDM |  |  | 56 | A |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 560 | mJ |  | 1 |
| Repetitive avalanche current | IAR |  |  | 14 | A |  | 1 |
| Repetitive avalanche energy | EAR |  |  | 25 | mJ |  | 1 |
| Maximum power dissipation | PD |  |  | 250 | W | TC = 25 °C | 1 |
| Peak diode recovery dV/dt | dV/dt |  |  | 9.2 | V/ns |  | 1 |
| Operating junction and storage temperature range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering recommendations (peak temperature) |  |  |  | 300 | °C | For 10 s | 1 |
| Mounting torque 6-32 or M3 screw |  |  |  | 10 | lbf · in |  | 1 |
| Mounting torque 6-32 or M3 screw |  |  |  | 1.1 | N · m |  | 1 |
| Gate-source threshold voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-source leakage | IGSS | -100 |  | 100 | nA | VGS = ± 30 V | 2 |
| Zero gate voltage drain current | IDSS |  |  | 25 | μA | VDS = 500 V, VGS = 0 V | 2 |
| Zero gate voltage drain current, TJ = 125 °C | IDSS |  |  | 250 | μA | VDS = 400 V, VGS = 0 V, TJ = 125 °C | 2 |
| Drain-source breakdown voltage | VDS | 500 |  |  | V | VGS = 0 V, ID = 250 μA | 2 |
| Drain-source on-state resistance | RDS(on) |  |  | 0.45 | Ω | VGS = 10 V, ID = 8.4 A | 2 |
| Forward transconductance | gfs | 8.1 |  |  | S | VDS = 50 V, ID = 8.4 A | 2 |
| Total gate charge | Qg |  |  | 81 | nC | VGS = 10 V, ID = 14 A, VDS = 400 V, see fig. 6 and 13 | 2 |
| Gate-source charge | Qgs |  |  | 20 | nC |  | 2 |
| Gate-drain charge | Qgd |  |  | 36 | nC |  | 2 |
| Gate input resistance | Rg | 0.5 |  | 2.1 | Ω | f = 1 MHz, open drain | 2 |
| Continuous source-drain diode current | IS |  |  | 14 | A |  | 2 |
| Pulsed diode forward current | ISM |  |  | 56 | A |  | 2 |
| Body diode voltage | VSD |  |  | 1.5 | V | TJ = 25 °C, IS = 14 A, VGS = 0 V | 2 |
| Body diode reverse recovery time | trr |  | 370 | 550 | ns | TJ = 25 °C, IF = 14 A, TJ = 125 °C, dI/dt = 100 A/μs | 2 |
| Body diode reverse recovery charge | Qrr |  | 4.4 | 6.5 | μC |  | 2 |
| Body diode reverse recovery current | IRRM |  | 21 | 31 | A |  | 2 |
| Junction-to-ambient thermal resistance | RthJA |  |  | 62 | °C/W |  | 2 |
| Case-to-sink thermal resistance, flat greased surface | RthCS |  | 0.5 |  | °C/W | Case-to-sink, flat, greased surface | 2 |
| Junction-to-case thermal resistance (drain) | RthJC |  |  | 0.5 | °C/W |  | 2 |

## CAD (KiCad official)

- Symbol: `IRFB13N50APBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irfb13n50apbf-etched.step` / `irfb13n50apbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfb13n50apbf.step` / `irfb13n50apbf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603102214525100032) (8 pp, sha256 `6b8e23c8add269ca`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irfb13n50apbf-datasheet.pdf)