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IRFB13N50APBF

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Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFB13N50APBF

Vishay Intertech · MOSFETs · TO-220AB

IRFB13N50APBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage is limited to ±30 V (VGS ±30 V absolute maximum).
2 D passive Drain of the N-channel MOSFET, rated for 500 V drain-source voltage and 14 A continuous drain current at TC = 25 °C; the datasheet's junction-to-case thermal resistance is specified to the drain.
3 S passive Source of the N-channel MOSFET; the integral body diode is rated for 14 A continuous and 56 A pulsed forward current.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 500 V 1
Gate-source voltage VGS -30 30 V 1
Continuous drain current, TC = 25 °C ID 14 A VGS at 10 V, TC = 25 °C 1
Continuous drain current, TC = 100 °C ID 9.1 A VGS at 10 V, TC = 100 °C 1
Pulsed drain current IDM 56 A 1
Single pulse avalanche energy EAS 560 mJ 1
Repetitive avalanche current IAR 14 A 1
Repetitive avalanche energy EAR 25 mJ 1
Maximum power dissipation PD 250 W TC = 25 °C 1
Peak diode recovery dV/dt dV/dt 9.2 V/ns 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Soldering recommendations (peak temperature) 300 °C For 10 s 1
Mounting torque 6-32 or M3 screw 10 lbf · in 1
Mounting torque 6-32 or M3 screw 1.1 N · m 1
Gate-source threshold voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS -100 100 nA VGS = ± 30 V 2
Zero gate voltage drain current IDSS 25 μA VDS = 500 V, VGS = 0 V 2
Zero gate voltage drain current, TJ = 125 °C IDSS 250 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C 2
Drain-source breakdown voltage VDS 500 V VGS = 0 V, ID = 250 μA 2
Drain-source on-state resistance RDS(on) 0.45 Ω VGS = 10 V, ID = 8.4 A 2
Forward transconductance gfs 8.1 S VDS = 50 V, ID = 8.4 A 2
Total gate charge Qg 81 nC VGS = 10 V, ID = 14 A, VDS = 400 V, see fig. 6 and 13 2
Gate-source charge Qgs 20 nC 2
Gate-drain charge Qgd 36 nC 2
Gate input resistance Rg 0.5 2.1 Ω f = 1 MHz, open drain 2
Continuous source-drain diode current IS 14 A 2
Pulsed diode forward current ISM 56 A 2
Body diode voltage VSD 1.5 V TJ = 25 °C, IS = 14 A, VGS = 0 V 2
Body diode reverse recovery time trr 370 550 ns TJ = 25 °C, IF = 14 A, TJ = 125 °C, dI/dt = 100 A/μs 2
Body diode reverse recovery charge Qrr 4.4 6.5 μC 2
Body diode reverse recovery current IRRM 21 31 A 2
Junction-to-ambient thermal resistance RthJA 62 °C/W 2
Case-to-sink thermal resistance, flat greased surface RthCS 0.5 °C/W Case-to-sink, flat, greased surface 2
Junction-to-case thermal resistance (drain) RthJC 0.5 °C/W 2

CAD (KiCad official)

  • Symbol: IRFB13N50APBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb13n50apbf-etched.step / irfb13n50apbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb13n50apbf.step / irfb13n50apbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (8 pp, sha256 6b8e23c8add269ca, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF