# IRF9620PBF

**Vishay Intertech** · MOSFETs · ITO-220AB-3

IRF9620PBF from Vishay Intertech, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V and a gate threshold of -2.0 V to -4.0 V. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -200 V and continuous ID of -3.5 A at TC = 25 °C; this pin is also connected to the mounting tab, and RthJC is 3.1 °C/W max junction-to-case (drain). |
| 3 | S | passive | Source of the P-channel MOSFET, carrying up to -3.5 A continuous and -14 A pulsed through the body diode (IS and ISM). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | ITO-220AB-3 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -200 |  |  | V | VGS = 0 V, ID = - 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -4 |  | -2 | V | VDS = VGS, ID = - 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -100 | μA | VDS = - 200 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current (125 °C) | IDSS |  |  | -500 | μA | VDS = - 160 V, VGS = 0 V, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 1.5 | Ω | VGS = - 10 V, ID = - 1.5 A | 2 |
| Forward Transconductance | gfs | 1 |  |  | S | VDS = - 50 V, ID = - 1.5 A | 2 |
| Total Gate Charge | Qg |  |  | 22 | nC | VGS = - 10 V, ID = - 4.0 A, VDS = - 160 V | 2 |
| Gate-Source Charge | Qgs |  |  | 12 | nC | VGS = - 10 V, ID = - 4.0 A, VDS = - 160 V | 2 |
| Gate-Drain Charge | Qgd |  |  | 10 | nC | VGS = - 10 V, ID = - 4.0 A, VDS = - 160 V | 2 |
| Continuous Source-Drain Diode Current | IS |  |  | -3.5 | A | MOSFET symbol showing integral reverse p-n junction diode | 2 |
| Pulsed Diode Forward Current | ISM |  |  | -14 | A | MOSFET symbol showing integral reverse p-n junction diode | 2 |
| Body Diode Voltage | VSD |  |  | -7 | V | TJ = 25 °C, IS = - 3.5 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 300 | 450 | ns | TJ = 25 °C, IF = - 3.5 A, dI/dt = 100 A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 1.9 | 2.9 | μC | TJ = 25 °C, IF = - 3.5 A, dI/dt = 100 A/μs | 2 |
| Drain-Source Voltage | VDS |  |  | -200 | V | TC = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | -3.5 | A | VGS at - 10 V, TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | -2 | A | VGS at - 10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM |  |  | -14 | A | TC = 25 °C | 1 |
| Linear Derating Factor |  |  |  | 0.32 | W/°C | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 40 | W | TC = 25 °C | 1 |
| Peak Diode Recovery dV/dt | dV/dt |  |  | -5 | V/ns | ISD ≤ 3.5 A, TJ ≤ 150 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering Recommendations (Peak Temperature) |  |  |  | 300 | °C | for 10 s, 1.6 mm from case | 1 |
| Maximum Junction-to-Ambient | RthJA |  |  | 62 | °C/W |  | 2 |
| Maximum Junction-to-Case (Drain) | RthJC |  |  | 3.1 | °C/W |  | 2 |
| Case-to-Sink, Flat, Greased Surface | RthCS |  | 0.5 |  | °C/W |  | 2 |
| VDS Temperature Coefficient | ΔVDS/ΔTJ |  | -0.22 |  | V/°C | Reference to 25 °C, ID = - 1 mA | 2 |
| Input Capacitance | Ciss |  | 350 |  | pF | VGS = 0 V, VDS = - 25 V, f = 1.0 MHz | 2 |
| Output Capacitance | Coss |  | 100 |  | pF | VGS = 0 V, VDS = - 25 V, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 30 |  | pF | VGS = 0 V, VDS = - 25 V, f = 1.0 MHz | 2 |
| Turn-On Delay Time | td(on) |  | 15 |  | ns | VDD = - 100 V, ID = - 1.5 A, Rg = 50 Ω, RD = 67 Ω | 2 |
| Rise Time | tr |  | 25 |  | ns | VDD = - 100 V, ID = - 1.5 A, Rg = 50 Ω, RD = 67 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 20 |  | ns | VDD = - 100 V, ID = - 1.5 A, Rg = 50 Ω, RD = 67 Ω | 2 |
| Fall Time | tf |  | 15 |  | ns | VDD = - 100 V, ID = - 1.5 A, Rg = 50 Ω, RD = 67 Ω | 2 |
| Internal Drain Inductance | LD |  | 4.5 |  | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |
| Internal Source Inductance | LS |  | 7.5 |  | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |

## CAD (KiCad official)

- Symbol: `IRF9620PBF`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: ITO-220AB-3 (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Vishay Intertech datasheet](docs/irf9620pbf-datasheet.pdf) (8 pp, sha256 `2edf72103edd0393`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf9620pbf-datasheet.pdf)