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IRF9610PBF

Public Made by Adom

by adom

Vishay Intertech MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 23d ago
viewers irf9610pbf: viewers · Ray 23d ago
irf9610pbf-etched.glb irf9610pbf: factory component page (tier=lcsc) · Ray 23d ago
irf9610pbf-etched.step irf9610pbf: factory component page (tier=lcsc) · Ray 23d ago
irf9610pbf-hero.glb irf9610pbf: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
irf9610pbf-hero.overlay.json Publish 0.1.0 · Ray 23d ago
irf9610pbf.glb Publish 0.1.0 · Ray 23d ago
irf9610pbf.kicad_mod Publish 0.1.0 · Ray 23d ago
irf9610pbf.kicad_sym Publish 0.1.0 · Ray 23d ago
irf9610pbf.lbr Publish 0.1.0 · Ray 23d ago
irf9610pbf.step Publish 0.1.0 · Ray 23d ago
package.json Publish 0.1.0 · Ray 23d ago
page.json irf9610pbf: specified limits as data (metadata.characteristics, 30 rows from the datasheet) · Ray 17d ago
README.md irf9610pbf: specified limits as data (metadata.characteristics, 30 rows from the datasheet) · Ray 17d ago

IRF9610PBF

Vishay Intertech · MOSFETs · TO-220

IRF9610PBF from Vishay Intertech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; gate-source voltage is rated at ±20 V maximum.
2 D passive Drain of the P-channel MOSFET; rated at -200 V drain-source and -1.8 A continuous drain current at TC = 25 °C (-1.0 A at TC = 100 °C), with the case also drain (RthJC is referenced to the drain).
3 S passive Source of the P-channel MOSFET; the integral body diode is rated at 1.8 A continuous and 7.0 A pulsed source-drain current.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -200 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -1.8 A VGS at -10 V, TC = 25 °C 1
Continuous Drain Current ID -1 A VGS at -10 V, TC = 100 °C 1
Pulsed Drain Current IDM -7 A Repetitive rating; pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 20 W TC = 25 °C 1
Inductive Current, Clamp ILM -7 A 1
Peak Diode Recovery dV/dt dV/dt -5 V/ns ISD ≤ -1.8 A, dI/dt ≤ 70 A/µs, VDD ≤ VDS, TJ ≤ 150 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s, 1.6 mm from case 1
Mounting Torque (6-32 or M3 screw) 10 lbf·in 6-32 or M3 screw 1
Mounting Torque (6-32 or M3 screw) 1.1 N·m 6-32 or M3 screw 1
Drain-Source Breakdown Voltage VDS -200 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -2 -4 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -100 µA VDS = - 200 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -500 µA VDS = - 160 V, VGS = 0 V, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 3 Ω VGS = - 10 V, ID = - 0.90 A; pulse width ≤ 300 µs, duty cycle ≤ 2 % 2
Forward Transconductance gfs 0.9 S VDS = - 50 V, ID = - 0.90 A; pulse width ≤ 300 µs, duty cycle ≤ 2 % 2
Total Gate Charge Qg 11 nC VGS = - 10 V, ID = - 3.5 A, VDS = - 160 V, see fig. 11 and 18b 2
Gate-Source Charge Qgs 7 nC 2
Gate-Drain Charge Qgd 4 nC 2
Continuous Source-Drain Diode Current IS -1.8 A 2
Pulsed Diode Forward Current ISM -7 A 2
Body Diode Voltage VSD -5.8 V TJ = 25 °C, IS = - 1.8 A, VGS = 0 V; pulse width ≤ 300 µs, duty cycle ≤ 2 % 2
Body Diode Reverse Recovery Time trr 240 360 ns TJ = 25 °C, IF = - 1.8 A, dI/dt = 100 A/µs 2
Body Diode Reverse Recovery Charge Qrr 1.7 2.6 µC 2
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 6.4 °C/W 2
Case-to-Sink, Flat, Greased Surface RthCS 0.5 °C/W Case-to-sink, flat, greased surface 2

CAD (KiCad official)

  • Symbol: IRF9610PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: irf9610pbf-etched.step / irf9610pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf9610pbf.step / irf9610pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 47e4006039665734, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF