component
IRF9610PBF
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF9610PBF
Vishay Intertech · MOSFETs · TO-220
IRF9610PBF from Vishay Intertech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated at ±20 V maximum. |
| 2 | D | passive | Drain of the P-channel MOSFET; rated at -200 V drain-source and -1.8 A continuous drain current at TC = 25 °C (-1.0 A at TC = 100 °C), with the case also drain (RthJC is referenced to the drain). |
| 3 | S | passive | Source of the P-channel MOSFET; the integral body diode is rated at 1.8 A continuous and 7.0 A pulsed source-drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -200 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -1.8 | A | VGS at -10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -1 | A | VGS at -10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | -7 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 20 | W | TC = 25 °C | 1 | ||
| Inductive Current, Clamp | ILM | -7 | A | 1 | |||
| Peak Diode Recovery dV/dt | dV/dt | -5 | V/ns | ISD ≤ -1.8 A, dI/dt ≤ 70 A/µs, VDD ≤ VDS, TJ ≤ 150 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Mounting Torque (6-32 or M3 screw) | 10 | lbf·in | 6-32 or M3 screw | 1 | |||
| Mounting Torque (6-32 or M3 screw) | 1.1 | N·m | 6-32 or M3 screw | 1 | |||
| Drain-Source Breakdown Voltage | VDS | -200 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -2 | -4 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -100 | µA | VDS = - 200 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -500 | µA | VDS = - 160 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 3 | Ω | VGS = - 10 V, ID = - 0.90 A; pulse width ≤ 300 µs, duty cycle ≤ 2 % | 2 | ||
| Forward Transconductance | gfs | 0.9 | S | VDS = - 50 V, ID = - 0.90 A; pulse width ≤ 300 µs, duty cycle ≤ 2 % | 2 | ||
| Total Gate Charge | Qg | 11 | nC | VGS = - 10 V, ID = - 3.5 A, VDS = - 160 V, see fig. 11 and 18b | 2 | ||
| Gate-Source Charge | Qgs | 7 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 4 | nC | 2 | |||
| Continuous Source-Drain Diode Current | IS | -1.8 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | -7 | A | 2 | |||
| Body Diode Voltage | VSD | -5.8 | V | TJ = 25 °C, IS = - 1.8 A, VGS = 0 V; pulse width ≤ 300 µs, duty cycle ≤ 2 % | 2 | ||
| Body Diode Reverse Recovery Time | trr | 240 | 360 | ns | TJ = 25 °C, IF = - 1.8 A, dI/dt = 100 A/µs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 1.7 | 2.6 | µC | 2 | ||
| Maximum Junction-to-Ambient | RthJA | 62 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 6.4 | °C/W | 2 | |||
| Case-to-Sink, Flat, Greased Surface | RthCS | 0.5 | °C/W | Case-to-sink, flat, greased surface | 2 |
CAD (KiCad official)
- Symbol:
IRF9610PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
irf9610pbf-etched.step/irf9610pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf9610pbf.step/irf9610pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
47e4006039665734, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).