component
IRF9530PBF
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF9530PBF
Vishay Intertech · MOSFETs · TO-220AB
IRF9530PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; the datasheet limits gate-source voltage VGS to ±20 V. |
| 2 | D | passive | Drain terminal, rated for VDS = -100 V and continuous drain current ID = -12 A at TC = 25 °C (-8.2 A at TC = 100 °C); the datasheet identifies the case/drain connection as the drain (RthJC is given as junction-to-case (drain)). |
| 3 | S | passive | Source terminal; the body diode continuous source-drain current is rated at -12 A and the pulsed diode forward current at -48 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -100 | V | TC = 25 °C, unless otherwise noted | 1 | ||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current | ID | -12 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous drain current | ID | -8.2 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed drain current | IDM | -48 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Single pulse avalanche energy | EAS | 400 | mJ | VDD = -25 V, starting TJ = 25 °C, L = 4.2 mH, Rg = 25 Ω, IAS = -12 A | 1 | ||
| Repetitive avalanche current | IAR | -12 | A | 1 | |||
| Repetitive avalanche energy | EAR | 8.8 | mJ | 1 | |||
| Maximum power dissipation | PD | 88 | W | TC = 25 °C | 1 | ||
| Peak diode recovery dV/dt | dV/dt | -5.5 | V/ns | ISD ≤ -12 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Soldering recommendations (peak temperature) | 300 | °C | For 10 s, 1.6 mm from case | 1 | |||
| Drain-source breakdown voltage | VDS | -100 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | -2 | -4 | V | VDS = VGS, ID = -250 μA | 2 | |
| Gate-source leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero gate voltage drain current | IDSS | -100 | μA | VDS = -100 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | -500 | μA | VDS = -80 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.3 | Ω | VGS = -10 V, ID = -7.2 A | 2 | ||
| Forward transconductance | gfs | 3.7 | S | VDS = -50 V, ID = -7.2 A | 2 | ||
| Gate input resistance | Rg | 0.4 | 3.3 | Ω | f = 1 MHz, open drain | 2 | |
| Total gate charge | Qg | 38 | nC | VGS = -10 V, ID = -12 A, VDS = -80 V | 2 | ||
| Gate-source charge | Qgs | 6.8 | nC | 2 | |||
| Gate-drain charge | Qgd | 21 | nC | 2 | |||
| Continuous source-drain diode current | IS | -12 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 | ||
| Pulsed diode forward current | ISM | -48 | A | 2 | |||
| Body diode voltage | VSD | -6.3 | V | TJ = 25 °C, IS = -12 A, VGS = 0 V | 2 | ||
| Body diode reverse recovery time | trr | 120 | 240 | ns | TJ = 25 °C, IF = -12 A, dI/dt = 100 A/μs | 2 | |
| Body diode reverse recovery charge | Qrr | 0.46 | 0.92 | μC | 2 | ||
| Maximum junction-to-ambient | RthJA | 62 | °C/W | 2 | |||
| Maximum junction-to-case (drain) | RthJC | 1.7 | °C/W | 2 | |||
| Case-to-sink, flat, greased surface | RthCS | 0.5 | °C/W | Case-to-sink, flat, greased surface | 2 | ||
| Linear derating factor | 0.59 | W/°C | 1 |
CAD (KiCad official)
- Symbol:
IRF9530PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irf9530pbf-etched.step/irf9530pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf9530pbf.step/irf9530pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (8 pp, sha256
18757299d75e3060, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF9530PBF
**Vishay Intertech** · MOSFETs · TO-220AB
IRF9530PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; the datasheet limits gate-source voltage VGS to ±20 V. |
| 2 | D | passive | Drain terminal, rated for VDS = -100 V and continuous drain current ID = -12 A at TC = 25 °C (-8.2 A at TC = 100 °C); the datasheet identifies the case/drain connection as the drain (RthJC is given as junction-to-case (drain)). |
| 3 | S | passive | Source terminal; the body diode continuous source-drain current is rated at -12 A and the pulsed diode forward current at -48 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | -100 | V | TC = 25 °C, unless otherwise noted | 1 |
| Gate-source voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous drain current | ID | | | -12 | A | VGS at 10 V, TC = 25 °C | 1 |
| Continuous drain current | ID | | | -8.2 | A | VGS at 10 V, TC = 100 °C | 1 |
| Pulsed drain current | IDM | | | -48 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 |
| Single pulse avalanche energy | EAS | | | 400 | mJ | VDD = -25 V, starting TJ = 25 °C, L = 4.2 mH, Rg = 25 Ω, IAS = -12 A | 1 |
| Repetitive avalanche current | IAR | | | -12 | A | | 1 |
| Repetitive avalanche energy | EAR | | | 8.8 | mJ | | 1 |
| Maximum power dissipation | PD | | | 88 | W | TC = 25 °C | 1 |
| Peak diode recovery dV/dt | dV/dt | | | -5.5 | V/ns | ISD ≤ -12 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C | 1 |
| Operating junction and storage temperature range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Soldering recommendations (peak temperature) | | | | 300 | °C | For 10 s, 1.6 mm from case | 1 |
| Drain-source breakdown voltage | VDS | -100 | | | V | VGS = 0 V, ID = -250 μA | 2 |
| Gate-source threshold voltage | VGS(th) | -2 | | -4 | V | VDS = VGS, ID = -250 μA | 2 |
| Gate-source leakage | IGSS | -100 | | 100 | nA | VGS = ± 20 V | 2 |
| Zero gate voltage drain current | IDSS | | | -100 | μA | VDS = -100 V, VGS = 0 V | 2 |
| Zero gate voltage drain current | IDSS | | | -500 | μA | VDS = -80 V, VGS = 0 V, TJ = 150 °C | 2 |
| Drain-source on-state resistance | RDS(on) | | | 0.3 | Ω | VGS = -10 V, ID = -7.2 A | 2 |
| Forward transconductance | gfs | 3.7 | | | S | VDS = -50 V, ID = -7.2 A | 2 |
| Gate input resistance | Rg | 0.4 | | 3.3 | Ω | f = 1 MHz, open drain | 2 |
| Total gate charge | Qg | | | 38 | nC | VGS = -10 V, ID = -12 A, VDS = -80 V | 2 |
| Gate-source charge | Qgs | | | 6.8 | nC | | 2 |
| Gate-drain charge | Qgd | | | 21 | nC | | 2 |
| Continuous source-drain diode current | IS | | | -12 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 |
| Pulsed diode forward current | ISM | | | -48 | A | | 2 |
| Body diode voltage | VSD | | | -6.3 | V | TJ = 25 °C, IS = -12 A, VGS = 0 V | 2 |
| Body diode reverse recovery time | trr | | 120 | 240 | ns | TJ = 25 °C, IF = -12 A, dI/dt = 100 A/μs | 2 |
| Body diode reverse recovery charge | Qrr | | 0.46 | 0.92 | μC | | 2 |
| Maximum junction-to-ambient | RthJA | | | 62 | °C/W | | 2 |
| Maximum junction-to-case (drain) | RthJC | | | 1.7 | °C/W | | 2 |
| Case-to-sink, flat, greased surface | RthCS | | 0.5 | | °C/W | Case-to-sink, flat, greased surface | 2 |
| Linear derating factor | | | 0.59 | | W/°C | | 1 |
## CAD (KiCad official)
- Symbol: `IRF9530PBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irf9530pbf-etched.step` / `irf9530pbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf9530pbf.step` / `irf9530pbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588954860603781120) (8 pp, sha256 `18757299d75e3060`, retrieved 2026-10-14, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf9530pbf-datasheet.pdf)