# IRF9310TR

**UMW** · MOSFETs · SOP-8

IRF9310TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | SOURCE terminal; the datasheet gives no separate pin limit, and the absolute maximum ratings apply, with VDS of -30 V and VGS of ±20 V. |
| 2 | S | passive | SOURCE terminal; the datasheet gives no separate pin limit, and the absolute maximum ratings apply, with VDS of -30 V and VGS of ±20 V. |
| 3 | S | passive | SOURCE terminal; the datasheet gives no separate pin limit, and the absolute maximum ratings apply, with VDS of -30 V and VGS of ±20 V. |
| 4 | G | input | GATE terminal; gate-to-source voltage is rated ±20 V, and the gate threshold VGS(th) is -1.3 V min to -2.4 V max at ID = -100 µA. |
| 5 | D | passive | DRAIN terminal; drain-to-source voltage is rated -30 V, and the continuous drain current is -20 A at VGS = -10 V (TA = 25°C). |
| 6 | D | passive | DRAIN terminal; drain-to-source voltage is rated -30 V, and the continuous drain current is -20 A at VGS = -10 V (TA = 25°C). |
| 7 | D | passive | DRAIN terminal; drain-to-source voltage is rated -30 V, and the continuous drain current is -20 A at VGS = -10 V (TA = 25°C). |
| 8 | D | passive | DRAIN terminal; drain-to-source voltage is rated -30 V, and the continuous drain current is -20 A at VGS = -10 V (TA = 25°C). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 |  |  | V |  | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID | -20 |  |  | A | VGS=10V, TA=25°C | 1 |
| Continuous Drain Current | ID | -16 |  |  | A | VGS=10V, TA=70°C | 1 |
| Pulsed Drain Current | IDM | -160 |  |  | A |  | 1 |
| Power Dissipation | PD |  |  | 2.5 | W | TA=25°C | 1 |
| Power Dissipation | PD |  |  | 1.6 | W | TA=70°C | 1 |
| Linear Derating Factor |  |  |  | 0.02 | W/°C |  | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | ID=-250µA, VGS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.3 |  | -2.4 | V | VDS=VGS, ID=-100μA | 2 |
| Breakdown Voltage Temp. Coefficient | ΔBVDSS/ΔTJ |  | 0.02 |  | V/°C | ID=-1mA, Reference to 25°C | 2 |
| Gate-to-Source Forward Leakage | IGSS |  |  | 100 | nA | VGS=20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | -100 |  |  | nA | VGS=-20V | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | -1 | µA | VDS=-24V, VGS=0V | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | -150 | µA | VDS=-24V, VGS=0V, TJ=125°C | 2 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  |  | 4.6 | mΩ | VGS=-10V, ID=-20A | 2 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  |  | 6.8 | mΩ | VGS=-4.5V, ID=-16A | 2 |
| Forward Transconductance | gFS |  | 39 |  | S | VDS=-10V, ID=-16A | 2 |
| Total Gate Charge | Qg |  | 58 |  | nC | VDS=-15V, VGS=-4.5V, ID=-16A | 2 |
| Gate Resistance | Rg |  | 2.8 |  | Ω |  | 2 |
| Input Capacitance | Ciss |  | 5250 |  | pF | VGS=0V, VDS=-15V, f=1.0MHz | 2 |
| Output Capacitance | Coss |  | 1300 |  | pF | VGS=0V, VDS=-15V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 880 |  | pF | VGS=0V, VDS=-15V, f=1.0MHz | 2 |
| Source Current, Continuous (Body Diode) | IS | -2.5 |  |  | A |  | 3 |
| Pulsed Source Current (Body Diode) | ISM | -160 |  |  | A |  | 3 |
| Diode Forward Voltage | VSD |  | -1.2 |  | V | TJ=25°C, IS=-2.5A, VGS=0V | 3 |
| Reverse Recovery Time | trr |  | 71 | 107 | ns | TJ=25°C, IF=-2.5A, VDD=-24V, dI/dt=100A/μs | 3 |
| Reverse Recovery Charge | Qrr |  | 12 | 18 | nC | TJ=25°C, IF=-2.5A, VDD=-24V, dI/dt=100A/μs | 3 |
| Thermal Resistance Junction-to-Drain Lead | RθJL |  | 18 | 20 | °C/W |  | 3 |
| Thermal Resistance Junction-to-Ambient | RθJA |  |  | 50 | °C/W | Mounted on 1 inch square copper board | 3 |

## CAD (KiCad official)

- Symbol: `IRF9310TR`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `irf9310tr-etched.step` / `irf9310tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf9310tr.step` / `irf9310tr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755878995743252480) (10 pp, sha256 `9e61e81010bcd626`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf9310tr-datasheet.pdf)