component
IRF9310TR
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| irf9310tr-etched.glb | 16d ago |
| irf9310tr-etched.step | 16d ago |
| irf9310tr-hero.glb | 16d ago |
| irf9310tr-hero.overlay.json | 16d ago |
| irf9310tr.glb | 16d ago |
| irf9310tr.kicad_mod | 16d ago |
| irf9310tr.kicad_sym | 16d ago |
| irf9310tr.lbr | 16d ago |
| irf9310tr.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
IRF9310TR
UMW · MOSFETs · SOP-8
IRF9310TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | SOURCE terminal; the datasheet gives no separate pin limit, and the absolute maximum ratings apply, with VDS of -30 V and VGS of ±20 V. |
| 2 | S | passive | SOURCE terminal; the datasheet gives no separate pin limit, and the absolute maximum ratings apply, with VDS of -30 V and VGS of ±20 V. |
| 3 | S | passive | SOURCE terminal; the datasheet gives no separate pin limit, and the absolute maximum ratings apply, with VDS of -30 V and VGS of ±20 V. |
| 4 | G | input | GATE terminal; gate-to-source voltage is rated ±20 V, and the gate threshold VGS(th) is -1.3 V min to -2.4 V max at ID = -100 µA. |
| 5 | D | passive | DRAIN terminal; drain-to-source voltage is rated -30 V, and the continuous drain current is -20 A at VGS = -10 V (TA = 25°C). |
| 6 | D | passive | DRAIN terminal; drain-to-source voltage is rated -30 V, and the continuous drain current is -20 A at VGS = -10 V (TA = 25°C). |
| 7 | D | passive | DRAIN terminal; drain-to-source voltage is rated -30 V, and the continuous drain current is -20 A at VGS = -10 V (TA = 25°C). |
| 8 | D | passive | DRAIN terminal; drain-to-source voltage is rated -30 V, and the continuous drain current is -20 A at VGS = -10 V (TA = 25°C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -20 | A | VGS=10V, TA=25°C | 1 | ||
| Continuous Drain Current | ID | -16 | A | VGS=10V, TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -160 | A | 1 | |||
| Power Dissipation | PD | 2.5 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 1.6 | W | TA=70°C | 1 | ||
| Linear Derating Factor | 0.02 | W/°C | 1 | ||||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | ID=-250µA, VGS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1.3 | -2.4 | V | VDS=VGS, ID=-100μA | 2 | |
| Breakdown Voltage Temp. Coefficient | ΔBVDSS/ΔTJ | 0.02 | V/°C | ID=-1mA, Reference to 25°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | -1 | µA | VDS=-24V, VGS=0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | -150 | µA | VDS=-24V, VGS=0V, TJ=125°C | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 4.6 | mΩ | VGS=-10V, ID=-20A | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 6.8 | mΩ | VGS=-4.5V, ID=-16A | 2 | ||
| Forward Transconductance | gFS | 39 | S | VDS=-10V, ID=-16A | 2 | ||
| Total Gate Charge | Qg | 58 | nC | VDS=-15V, VGS=-4.5V, ID=-16A | 2 | ||
| Gate Resistance | Rg | 2.8 | Ω | 2 | |||
| Input Capacitance | Ciss | 5250 | pF | VGS=0V, VDS=-15V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 1300 | pF | VGS=0V, VDS=-15V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 880 | pF | VGS=0V, VDS=-15V, f=1.0MHz | 2 | ||
| Source Current, Continuous (Body Diode) | IS | -2.5 | A | 3 | |||
| Pulsed Source Current (Body Diode) | ISM | -160 | A | 3 | |||
| Diode Forward Voltage | VSD | -1.2 | V | TJ=25°C, IS=-2.5A, VGS=0V | 3 | ||
| Reverse Recovery Time | trr | 71 | 107 | ns | TJ=25°C, IF=-2.5A, VDD=-24V, dI/dt=100A/μs | 3 | |
| Reverse Recovery Charge | Qrr | 12 | 18 | nC | TJ=25°C, IF=-2.5A, VDD=-24V, dI/dt=100A/μs | 3 | |
| Thermal Resistance Junction-to-Drain Lead | RθJL | 18 | 20 | °C/W | 3 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 50 | °C/W | Mounted on 1 inch square copper board | 3 |
CAD (KiCad official)
- Symbol:
IRF9310TR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf9310tr-etched.step/irf9310tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf9310tr.step/irf9310tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
9e61e81010bcd626, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).