component
IRF8788TR
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF8788TR
UMW · MOSFETs · SOP-8
IRF8788TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | SOURCE terminal of the N-channel MOSFET; the device is rated for a drain-to-source voltage VDS of 30V maximum. |
| 2 | S | passive | SOURCE terminal of the N-channel MOSFET; the device is rated for a drain-to-source voltage VDS of 30V maximum. |
| 3 | S | passive | SOURCE terminal of the N-channel MOSFET; the device is rated for a drain-to-source voltage VDS of 30V maximum. |
| 4 | G | input | GATE terminal of the N-channel MOSFET; the gate-to-source voltage VGS is rated ±20V maximum. |
| 5 | D | passive | DRAIN terminal of the N-channel MOSFET; continuous drain current ID is rated 24A at VGS=10V with TA=25°C. |
| 6 | D | passive | DRAIN terminal of the N-channel MOSFET; continuous drain current ID is rated 24A at VGS=10V with TA=25°C. |
| 7 | D | passive | DRAIN terminal of the N-channel MOSFET; continuous drain current ID is rated 24A at VGS=10V with TA=25°C. |
| 8 | D | passive | DRAIN terminal of the N-channel MOSFET; continuous drain current ID is rated 24A at VGS=10V with TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 2 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 24 | A | VGS=10V, TA=25°C | 2 | ||
| Continuous Drain Current | ID | 19 | A | VGS=10V, TA=70°C | 2 | ||
| Pulsed Drain Current | IDM | 190 | A | 2 | |||
| Power Dissipation | PD | 2.5 | W | TA=25°C | 2 | ||
| Power Dissipation | PD | 1.6 | W | TA=70°C | 2 | ||
| Linear Derating Factor | 0.02 | W/°C | 2 | ||||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Junction-to-Drain Lead | RθJL | 20 | °C/W | 2 | |||
| Junction-to-Ambient | RθJA | 50 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1.35 | 1.8 | 2.35 | V | VDS=VGS, ID=100μA | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | 2.3 | 2.8 | mΩ | VGS=10V, ID=24A | 3 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 3.04 | 3.8 | mΩ | VGS=4.5V, ID=19A | 3 | |
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=24V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 150 | µA | VDS=24V, VGS=0V, TJ=125°C | 3 | ||
| Forward Transconductance | gFS | 66 | S | VDS=15V, ID=19A | 3 | ||
| Breakdown Voltage Temp. Coefficient | ΔBVDSS/ΔTJ | 0.024 | V/°C | ID=1mA, Reference to 25°C | 3 | ||
| Gate Threshold Voltage Coefficient | ΔVGS(th) | -6.59 | mV/°C | VDS=VGS, ID=100μA | 3 | ||
| Single Pulse Avalanche Energy | EAS | 230 | mJ | 4 | |||
| Avalanche Current | IAR | 19 | A | 4 |
CAD (KiCad official)
- Symbol:
IRF8788TR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf8788tr-etched.step/irf8788tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf8788tr.step/irf8788tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (11 pp, sha256
99691a2acbae82c3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF8788TR
**UMW** · MOSFETs · SOP-8
IRF8788TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | SOURCE terminal of the N-channel MOSFET; the device is rated for a drain-to-source voltage VDS of 30V maximum. |
| 2 | S | passive | SOURCE terminal of the N-channel MOSFET; the device is rated for a drain-to-source voltage VDS of 30V maximum. |
| 3 | S | passive | SOURCE terminal of the N-channel MOSFET; the device is rated for a drain-to-source voltage VDS of 30V maximum. |
| 4 | G | input | GATE terminal of the N-channel MOSFET; the gate-to-source voltage VGS is rated ±20V maximum. |
| 5 | D | passive | DRAIN terminal of the N-channel MOSFET; continuous drain current ID is rated 24A at VGS=10V with TA=25°C. |
| 6 | D | passive | DRAIN terminal of the N-channel MOSFET; continuous drain current ID is rated 24A at VGS=10V with TA=25°C. |
| 7 | D | passive | DRAIN terminal of the N-channel MOSFET; continuous drain current ID is rated 24A at VGS=10V with TA=25°C. |
| 8 | D | passive | DRAIN terminal of the N-channel MOSFET; continuous drain current ID is rated 24A at VGS=10V with TA=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 2 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 2 |
| Continuous Drain Current | ID | | | 24 | A | VGS=10V, TA=25°C | 2 |
| Continuous Drain Current | ID | | | 19 | A | VGS=10V, TA=70°C | 2 |
| Pulsed Drain Current | IDM | | | 190 | A | | 2 |
| Power Dissipation | PD | | | 2.5 | W | TA=25°C | 2 |
| Power Dissipation | PD | | | 1.6 | W | TA=70°C | 2 |
| Linear Derating Factor | | | | 0.02 | W/°C | | 2 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Junction-to-Drain Lead | RθJL | | | 20 | °C/W | | 2 |
| Junction-to-Ambient | RθJA | | | 50 | °C/W | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | ID=250µA, VGS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | 1.35 | 1.8 | 2.35 | V | VDS=VGS, ID=100μA | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | 2.3 | 2.8 | mΩ | VGS=10V, ID=24A | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | 3.04 | 3.8 | mΩ | VGS=4.5V, ID=19A | 3 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS=20V | 3 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS=-20V | 3 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | µA | VDS=24V, VGS=0V | 3 |
| Drain-to-Source Leakage Current | IDSS | | | 150 | µA | VDS=24V, VGS=0V, TJ=125°C | 3 |
| Forward Transconductance | gFS | 66 | | | S | VDS=15V, ID=19A | 3 |
| Breakdown Voltage Temp. Coefficient | ΔBVDSS/ΔTJ | | 0.024 | | V/°C | ID=1mA, Reference to 25°C | 3 |
| Gate Threshold Voltage Coefficient | ΔVGS(th) | | -6.59 | | mV/°C | VDS=VGS, ID=100μA | 3 |
| Single Pulse Avalanche Energy | EAS | | | 230 | mJ | | 4 |
| Avalanche Current | IAR | | | 19 | A | | 4 |
## CAD (KiCad official)
- Symbol: `IRF8788TR`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `irf8788tr-etched.step` / `irf8788tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf8788tr.step` / `irf8788tr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755878504007786496) (11 pp, sha256 `99691a2acbae82c3`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf8788tr-datasheet.pdf)