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IRF8788TR

Public Made by Adom

by adom

UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF8788TR

UMW · MOSFETs · SOP-8

IRF8788TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive SOURCE terminal of the N-channel MOSFET; the device is rated for a drain-to-source voltage VDS of 30V maximum.
2 S passive SOURCE terminal of the N-channel MOSFET; the device is rated for a drain-to-source voltage VDS of 30V maximum.
3 S passive SOURCE terminal of the N-channel MOSFET; the device is rated for a drain-to-source voltage VDS of 30V maximum.
4 G input GATE terminal of the N-channel MOSFET; the gate-to-source voltage VGS is rated ±20V maximum.
5 D passive DRAIN terminal of the N-channel MOSFET; continuous drain current ID is rated 24A at VGS=10V with TA=25°C.
6 D passive DRAIN terminal of the N-channel MOSFET; continuous drain current ID is rated 24A at VGS=10V with TA=25°C.
7 D passive DRAIN terminal of the N-channel MOSFET; continuous drain current ID is rated 24A at VGS=10V with TA=25°C.
8 D passive DRAIN terminal of the N-channel MOSFET; continuous drain current ID is rated 24A at VGS=10V with TA=25°C.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 2
Gate-to-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 24 A VGS=10V, TA=25°C 2
Continuous Drain Current ID 19 A VGS=10V, TA=70°C 2
Pulsed Drain Current IDM 190 A 2
Power Dissipation PD 2.5 W TA=25°C 2
Power Dissipation PD 1.6 W TA=70°C 2
Linear Derating Factor 0.02 W/°C 2
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 2
Junction-to-Drain Lead RθJL 20 °C/W 2
Junction-to-Ambient RθJA 50 °C/W 2
Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 3
Gate Threshold Voltage VGS(th) 1.35 1.8 2.35 V VDS=VGS, ID=100μA 3
Static Drain-to-Source On-Resistance RDS(ON) 2.3 2.8 mΩ VGS=10V, ID=24A 3
Static Drain-to-Source On-Resistance RDS(ON) 3.04 3.8 mΩ VGS=4.5V, ID=19A 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Drain-to-Source Leakage Current IDSS 1 µA VDS=24V, VGS=0V 3
Drain-to-Source Leakage Current IDSS 150 µA VDS=24V, VGS=0V, TJ=125°C 3
Forward Transconductance gFS 66 S VDS=15V, ID=19A 3
Breakdown Voltage Temp. Coefficient ΔBVDSS/ΔTJ 0.024 V/°C ID=1mA, Reference to 25°C 3
Gate Threshold Voltage Coefficient ΔVGS(th) -6.59 mV/°C VDS=VGS, ID=100μA 3
Single Pulse Avalanche Energy EAS 230 mJ 4
Avalanche Current IAR 19 A 4

CAD (KiCad official)

  • Symbol: IRF8788TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf8788tr-etched.step / irf8788tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf8788tr.step / irf8788tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 99691a2acbae82c3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF