component

IRF8113TR

Public Made by Adom

by adom

UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsirf8113trfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 23d ago
viewers irf8113tr: viewers · Ray 23d ago
irf8113tr-etched.glb Publish 0.1.0 · Ray 23d ago
irf8113tr-etched.step irf8113tr: factory component page (tier=lcsc) · Ray 23d ago
irf8113tr-hero.glb irf8113tr: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
irf8113tr-hero.overlay.json Publish 0.1.0 · Ray 23d ago
irf8113tr.glb Publish 0.1.0 · Ray 23d ago
irf8113tr.kicad_mod Publish 0.1.0 · Ray 23d ago
irf8113tr.kicad_sym Publish 0.1.0 · Ray 23d ago
irf8113tr.lbr Publish 0.1.0 · Ray 23d ago
irf8113tr.step Publish 0.1.0 · Ray 23d ago
package.json Publish 0.1.0 · Ray 23d ago
page.json Set visibility: public · Ray 23d ago
README.md Publish 0.1.0 · Ray 23d ago

IRF8113TR

UMW · MOSFETs · SOP-8

IRF8113TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive SOURCE pin of the N-channel MOSFET; the datasheet gives no separate pin limit for it beyond the 30 V VDS and ±20 V VGS absolute maximum ratings.
2 S passive SOURCE pin of the N-channel MOSFET; the datasheet gives no separate pin limit for it beyond the 30 V VDS and ±20 V VGS absolute maximum ratings.
3 S passive SOURCE pin of the N-channel MOSFET; the datasheet gives no separate pin limit for it beyond the 30 V VDS and ±20 V VGS absolute maximum ratings.
4 G passive GATE pin of the MOSFET; gate-to-source voltage is rated at ±20 V (absolute maximum, TA=25°C).
5 D passive DRAIN pin of the MOSFET; drain-to-source voltage is rated at 30 V (absolute maximum), and the drain is internally common with pins 6-8.
6 D passive DRAIN pin of the MOSFET; drain-to-source voltage is rated at 30 V (absolute maximum), and the drain is internally common with pins 5, 7 and 8.
7 D passive DRAIN pin of the MOSFET; drain-to-source voltage is rated at 30 V (absolute maximum), and the drain is internally common with pins 5, 6 and 8.
8 D passive DRAIN pin of the MOSFET; drain-to-source voltage is rated at 30 V (absolute maximum), and the drain is internally common with pins 5-7.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 3
Gate Threshold Voltage VGS(th) 1.5 2.2 V VDS=VGS, ID=250μA 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Drain-to-Source Leakage Current IDSS 1 µA VDS=24V, VGS=0V 3
Drain-to-Source Leakage Current IDSS 150 µA VDS=24V, VGS=0V, TJ=125°C 3
Static Drain-to-Source On-Resistance RDS(ON) 4.7 5.6 mΩ VGS=10V, ID=17.2A 3
Static Drain-to-Source On-Resistance RDS(ON) 5.8 6.8 mΩ VGS=4.5V, ID=13.8A 3
Drain-Source Voltage VDS 30 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current, VGS=10V ID 17.2 A TA=25°C 1
Continuous Drain Current, VGS=10V ID 13.8 A TA=70°C 1
Pulsed Drain Current IDM 135 A 1
Power Dissipation PD 2.5 W TA=25°C 1
Power Dissipation PD 1.6 W TA=70°C 1
Linear Derating Factor 0.02 W/°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Junction-to-Drain Lead RθJL 20 °C/W 2
Junction-to-Ambient RθJA 50 °C/W 2

CAD (KiCad official)

  • Symbol: IRF8113TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf8113tr-etched.step / irf8113tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf8113tr.step / irf8113tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (12 pp, sha256 061f2f1e2ef37358, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF