# IRF7842TRPBF

**Infineon Technologies** · MOSFETs · SO-8

IRF7842TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel HEXFET; the datasheet gives VDS max 40 V and continuous ID 18 A at TA = 25°C with VGS = 10 V. |
| 2 | S | passive | Source terminal of the N-channel HEXFET; the body diode continuous source current IS is rated at 3.1 A. |
| 3 | S | passive | Source terminal of the N-channel HEXFET; the body diode pulsed source current ISM is rated at 140 A. |
| 4 | G | input | Gate terminal; the gate-to-source voltage VGS is limited to ±20 V. |
| 5 | D | passive | Drain terminal of the N-channel HEXFET; the drain-to-source voltage VDS is limited to 40 V. |
| 6 | D | passive | Drain terminal of the N-channel HEXFET; the drain-to-source voltage VDS is limited to 40 V. |
| 7 | D | passive | Drain terminal of the N-channel HEXFET; the drain-to-source voltage VDS is limited to 40 V. |
| 8 | D | passive | Drain terminal of the N-channel HEXFET; the drain-to-source voltage VDS is limited to 40 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS |  |  | 40 | V |  | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 18 | A | TA = 25°C, VGS @ 10V | 1 |
| Continuous Drain Current | ID |  |  | 14 | A | TA = 70°C, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 140 | A |  | 1 |
| Power Dissipation | PD |  |  | 2.5 | W | TA = 25°C | 1 |
| Power Dissipation | PD |  |  | 1.6 | W | TA = 70°C | 1 |
| Linear Derating Factor |  |  |  | 0.02 | W/°C |  | 1 |
| Operating Junction Temperature | TJ | -55 |  | 150 | °C |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |
| Junction-to-Drain Lead Thermal Resistance | RθJL |  |  | 20 | °C/W |  | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA |  |  | 50 | °C/W | When mounted on 1 inch square copper board | 1 |
| Drain-to-Source Breakdown Voltage | BVDSS | 40 |  |  | V | VGS = 0V, ID = 250μA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) |  | 4 | 5 | mΩ | VGS = 10V, ID = 17A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) |  | 4.7 | 5.9 | mΩ | VGS = 4.5V, ID = 14A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.35 |  | 2.25 | V | VDS = VGS, ID = 250μA | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 1 | μA | VDS = 32V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 150 | μA | VDS = 32V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS |  |  | 100 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS |  |  | -100 | nA | VGS = -20V | 2 |
| Forward Transconductance | gfs | 81 |  |  | S | VDS = 20V, ID = 14A | 2 |
| Total Gate Charge | Qg |  | 33 | 50 | nC | VDS = 20V, VGS = 4.5V, ID = 14A | 2 |
| Gate Resistance | RG |  | 1.3 | 2.6 | Ω |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1 | V | TJ = 25°C, IS = 14A, VGS = 0V | 2 |
| Continuous Source Current (Body Diode) | IS |  |  | 3.1 | A |  | 2 |
| Pulsed Source Current (Body Diode) | ISM |  |  | 140 | A |  | 2 |
| Reverse Recovery Time | trr |  | 99 | 150 | ns | TJ = 25°C, IF = 14A, VDD = 20V, di/dt = 100A/μs | 2 |
| Reverse Recovery Charge | Qrr |  | 11 | 17 | nC | TJ = 25°C, IF = 14A, VDD = 20V, di/dt = 100A/μs | 2 |
| Breakdown Voltage Temp. Coefficient | ΔBVDSS/ΔTJ |  | 0.037 |  | V/°C | Reference to 25°C, ID = 1mA | 2 |
| Gate Threshold Voltage Coefficient | ΔVGS(th) |  | -5.6 |  | mV/°C |  | 2 |

## CAD (KiCad official)

- Symbol: `IRF7842TRPBF`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `irf7842trpbf-etched.step` / `irf7842trpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7842trpbf.step` / `irf7842trpbf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885347963457536) (10 pp, sha256 `78f5f147307b8e20`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf7842trpbf-datasheet.pdf)