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IRF7842TRPBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 1mo ago
viewers irf7842trpbf: viewers · Ray 1mo ago
irf7842trpbf-etched.glb irf7842trpbf: factory component page (tier=lcsc) · Ray 1mo ago
irf7842trpbf-etched.step irf7842trpbf: factory component page (tier=lcsc) · Ray 1mo ago
irf7842trpbf-hero.glb irf7842trpbf: hero GLB from the etched model (keeps the MPN mark) · Ray 1mo ago
irf7842trpbf-hero.overlay.json Publish 0.1.0 · Ray 1mo ago
irf7842trpbf.glb Publish 0.1.0 · Ray 1mo ago
irf7842trpbf.kicad_mod Publish 0.1.0 · Ray 1mo ago
irf7842trpbf.kicad_sym Publish 0.1.0 · Ray 1mo ago
irf7842trpbf.lbr Publish 0.1.0 · Ray 1mo ago
irf7842trpbf.step Publish 0.1.0 · Ray 1mo ago
package.json Publish 0.1.0 · Ray 1mo ago
page.json irf7842trpbf: specified limits as data (metadata.characteristics, 30 rows from the datasheet) · Ray 23d ago
README.md irf7842trpbf: specified limits as data (metadata.characteristics, 30 rows from the datasheet) · Ray 23d ago

IRF7842TRPBF

Infineon Technologies · MOSFETs · SO-8

IRF7842TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel HEXFET; the datasheet gives VDS max 40 V and continuous ID 18 A at TA = 25°C with VGS = 10 V.
2 S passive Source terminal of the N-channel HEXFET; the body diode continuous source current IS is rated at 3.1 A.
3 S passive Source terminal of the N-channel HEXFET; the body diode pulsed source current ISM is rated at 140 A.
4 G input Gate terminal; the gate-to-source voltage VGS is limited to ±20 V.
5 D passive Drain terminal of the N-channel HEXFET; the drain-to-source voltage VDS is limited to 40 V.
6 D passive Drain terminal of the N-channel HEXFET; the drain-to-source voltage VDS is limited to 40 V.
7 D passive Drain terminal of the N-channel HEXFET; the drain-to-source voltage VDS is limited to 40 V.
8 D passive Drain terminal of the N-channel HEXFET; the drain-to-source voltage VDS is limited to 40 V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDS 40 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 18 A TA = 25°C, VGS @ 10V 1
Continuous Drain Current ID 14 A TA = 70°C, VGS @ 10V 1
Pulsed Drain Current IDM 140 A 1
Power Dissipation PD 2.5 W TA = 25°C 1
Power Dissipation PD 1.6 W TA = 70°C 1
Linear Derating Factor 0.02 W/°C 1
Operating Junction Temperature TJ -55 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Junction-to-Drain Lead Thermal Resistance RθJL 20 °C/W 1
Junction-to-Ambient Thermal Resistance RθJA 50 °C/W When mounted on 1 inch square copper board 1
Drain-to-Source Breakdown Voltage BVDSS 40 V VGS = 0V, ID = 250μA 2
Static Drain-to-Source On-Resistance RDS(on) 4 5 mΩ VGS = 10V, ID = 17A 2
Static Drain-to-Source On-Resistance RDS(on) 4.7 5.9 mΩ VGS = 4.5V, ID = 14A 2
Gate Threshold Voltage VGS(th) 1.35 2.25 V VDS = VGS, ID = 250μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS = 32V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 150 μA VDS = 32V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 81 S VDS = 20V, ID = 14A 2
Total Gate Charge Qg 33 50 nC VDS = 20V, VGS = 4.5V, ID = 14A 2
Gate Resistance RG 1.3 2.6 Ω 2
Diode Forward Voltage VSD 1 V TJ = 25°C, IS = 14A, VGS = 0V 2
Continuous Source Current (Body Diode) IS 3.1 A 2
Pulsed Source Current (Body Diode) ISM 140 A 2
Reverse Recovery Time trr 99 150 ns TJ = 25°C, IF = 14A, VDD = 20V, di/dt = 100A/μs 2
Reverse Recovery Charge Qrr 11 17 nC TJ = 25°C, IF = 14A, VDD = 20V, di/dt = 100A/μs 2
Breakdown Voltage Temp. Coefficient ΔBVDSS/ΔTJ 0.037 V/°C Reference to 25°C, ID = 1mA 2
Gate Threshold Voltage Coefficient ΔVGS(th) -5.6 mV/°C 2

CAD (KiCad official)

  • Symbol: IRF7842TRPBF
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irf7842trpbf-etched.step / irf7842trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7842trpbf.step / irf7842trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 78f5f147307b8e20, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF