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IRF7820TRPBF
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Infineon Technologies MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF7820TRPBF
Infineon Technologies · MOSFETs · SOIC-8
IRF7820TRPBF from Infineon Technologies, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel HEXFET (200V VDS max, 20V VGS max); the integral body diode runs between source and drain. |
| 2 | S | passive | Source terminal of the N-channel HEXFET (200V VDS max, 20V VGS max); the integral body diode runs between source and drain. |
| 3 | S | passive | Source terminal of the N-channel HEXFET (200V VDS max, 20V VGS max); the integral body diode runs between source and drain. |
| 4 | G | input | Gate terminal; VGS is limited to ±20V per the absolute maximum ratings. |
| 5 | D | passive | Drain terminal; VDS is rated to 200V maximum. |
| 6 | D | passive | Drain terminal; VDS is rated to 200V maximum. |
| 7 | D | passive | Drain terminal; VDS is rated to 200V maximum. |
| 8 | D | passive | Drain terminal; VDS is rated to 200V maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | 200 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 3.7 | A | TA = 25°C, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 2.9 | A | TA = 70°C, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 29 | A | 1 | |||
| Power Dissipation | PD | 2.5 | W | TA = 25°C | 1 | ||
| Power Dissipation | PD | 1.6 | W | TA = 70°C | 1 | ||
| Linear Derating Factor | 0.02 | W/°C | 1 | ||||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Junction-to-Drain Lead Thermal Resistance | RJL | 20 | °C/W | 1 | |||
| Junction-to-Ambient Thermal Resistance | RJA | 50 | °C/W | 1 | |||
| Drain-to-Source Breakdown Voltage | BVDSS | 200 | V | VGS = 0V, ID = 250μA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 62.5 | 78 | mΩ | VGS = 10V, ID = 2.2A | 2 | |
| Gate Threshold Voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 100μA | 2 |
| Drain-to-Source Leakage Current | IDSS | 20 | μA | VDS = 200V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | μA | VDS = 200V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 5 | S | VDS = 50V, ID = 2.2A | 2 | ||
| Total Gate Charge | Qg | 29 | 44 | nC | ID = 2.2A, VDS = 100V, VGS = 10V | 2 | |
| Continuous Source Current (Body Diode) | IS | 1.5 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 29 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 2.2A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 33 | 50 | ns | TJ = 25°C, IF = 2.2A, VDD = 100V, di/dt = 500A/μs | 2 | |
| Reverse Recovery Charge | Qrr | 213 | 320 | nC | TJ = 25°C, IF = 2.2A, VDD = 100V, di/dt = 500A/μs | 2 | |
| Single Pulse Avalanche Energy | EAS | 606 | mJ | Starting TJ = 25°C, L = 155mH, RG = 50, IAS = 2.8A | 2 | ||
| Avalanche Current | IAR | 2.8 | A | Repetitive rating; pulse width limited by max. junction temperature | 2 |
CAD (KiCad official)
- Symbol:
IRF7820TRPBF - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
irf7820trpbf-etched.step/irf7820trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7820trpbf.step/irf7820trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
0050d35a5db7f36d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF7820TRPBF
**Infineon Technologies** · MOSFETs · SOIC-8
IRF7820TRPBF from Infineon Technologies, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel HEXFET (200V VDS max, 20V VGS max); the integral body diode runs between source and drain. |
| 2 | S | passive | Source terminal of the N-channel HEXFET (200V VDS max, 20V VGS max); the integral body diode runs between source and drain. |
| 3 | S | passive | Source terminal of the N-channel HEXFET (200V VDS max, 20V VGS max); the integral body diode runs between source and drain. |
| 4 | G | input | Gate terminal; VGS is limited to ±20V per the absolute maximum ratings. |
| 5 | D | passive | Drain terminal; VDS is rated to 200V maximum. |
| 6 | D | passive | Drain terminal; VDS is rated to 200V maximum. |
| 7 | D | passive | Drain terminal; VDS is rated to 200V maximum. |
| 8 | D | passive | Drain terminal; VDS is rated to 200V maximum. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | | | 200 | V | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 3.7 | A | TA = 25°C, VGS @ 10V | 1 |
| Continuous Drain Current | ID | | | 2.9 | A | TA = 70°C, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 29 | A | | 1 |
| Power Dissipation | PD | | | 2.5 | W | TA = 25°C | 1 |
| Power Dissipation | PD | | | 1.6 | W | TA = 70°C | 1 |
| Linear Derating Factor | | | | 0.02 | W/°C | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Junction-to-Drain Lead Thermal Resistance | RJL | | | 20 | °C/W | | 1 |
| Junction-to-Ambient Thermal Resistance | RJA | | | 50 | °C/W | | 1 |
| Drain-to-Source Breakdown Voltage | BVDSS | 200 | | | V | VGS = 0V, ID = 250μA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 62.5 | 78 | mΩ | VGS = 10V, ID = 2.2A | 2 |
| Gate Threshold Voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 100μA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 20 | μA | VDS = 200V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 250 | μA | VDS = 200V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -20V | 2 |
| Forward Transconductance | gfs | 5 | | | S | VDS = 50V, ID = 2.2A | 2 |
| Total Gate Charge | Qg | | 29 | 44 | nC | ID = 2.2A, VDS = 100V, VGS = 10V | 2 |
| Continuous Source Current (Body Diode) | IS | | | 1.5 | A | | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 29 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | TJ = 25°C, IS = 2.2A, VGS = 0V | 2 |
| Reverse Recovery Time | trr | | 33 | 50 | ns | TJ = 25°C, IF = 2.2A, VDD = 100V, di/dt = 500A/μs | 2 |
| Reverse Recovery Charge | Qrr | | 213 | 320 | nC | TJ = 25°C, IF = 2.2A, VDD = 100V, di/dt = 500A/μs | 2 |
| Single Pulse Avalanche Energy | EAS | | | 606 | mJ | Starting TJ = 25°C, L = 155mH, RG = 50, IAS = 2.8A | 2 |
| Avalanche Current | IAR | | | 2.8 | A | Repetitive rating; pulse width limited by max. junction temperature | 2 |
## CAD (KiCad official)
- Symbol: `IRF7820TRPBF`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `irf7820trpbf-etched.step` / `irf7820trpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7820trpbf.step` / `irf7820trpbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885350554591232) (9 pp, sha256 `0050d35a5db7f36d`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf7820trpbf-datasheet.pdf)