# IRF7493TRPBF

**Infineon Technologies** · MOSFETs · SO-8

IRF7493TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel HEXFET, pin 1 on the SO-8 top view; drain-to-source voltage is rated 80V. |
| 2 | S | passive | Source of the N-channel HEXFET, pin 2 on the SO-8 top view; continuous drain current is 9.3A at TC = 25°C. |
| 3 | S | passive | Source of the N-channel HEXFET, pin 3 on the SO-8 top view; pulsed drain current is 74A. |
| 4 | G | input | Gate of the N-channel HEXFET, pin 4 on the SO-8 top view; gate-to-source voltage is rated ±20V. |
| 5 | D | passive | Drain of the N-channel HEXFET, pin 5 on the SO-8 top view; RDS(on) is 15mΩ max at VGS = 10V. |
| 6 | D | passive | Drain of the N-channel HEXFET, pin 6 on the SO-8 top view; drain-to-source breakdown voltage is 80V min. |
| 7 | D | passive | Drain of the N-channel HEXFET, pin 7 on the SO-8 top view; continuous drain current is 7.4A at TC = 70°C. |
| 8 | D | passive | Drain of the N-channel HEXFET, pin 8 on the SO-8 top view; drain-to-source voltage is rated 80V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS |  |  | 80 | V |  | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 9.3 | A | TC = 25°C, VGS @ 10V | 1 |
| Continuous Drain Current | ID |  |  | 7.4 | A | TC = 70°C, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 74 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 2.5 | W | TC = 25°C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.6 | W | TC = 70°C | 1 |
| Linear Derating Factor |  |  |  | 0.02 | W/°C |  | 1 |
| Operating Junction Temperature | TJ | -55 |  | 150 | °C |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |
| Junction-to-Lead Thermal Resistance | RθJC |  |  | 20 | °C/W |  | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA |  |  | 50 | °C/W |  | 1 |
| Drain-to-Source Breakdown Voltage | BVDSS | 80 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) |  | 11.5 | 15 | mΩ | VGS = 10V, ID = 5.6A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 20 | µA | VDS = 80V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 250 | µA | VDS = 64V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS |  |  | 200 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS |  |  | -200 | nA | VGS = -20V | 2 |
| Forward Transconductance | gfs | 13 |  |  | S | VDS = 15V, ID = 5.6A | 2 |
| Total Gate Charge | Qg |  | 35 | 53 | nC |  | 2 |
| Continuous Source Current (Body Diode) | IS |  |  | 9.3 | A |  | 2 |
| Pulsed Source Current (Body Diode) | ISM |  |  | 74 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1.3 | V | TJ = 25°C, IS = 5.6A, VGS = 0V | 2 |
| Reverse Recovery Time | trr |  | 37 | 56 | ns | TJ = 25°C, IF = 5.6A, VDD = 15V, di/dt = 100A/µs | 2 |
| Reverse Recovery Charge | Qrr |  | 52 | 78 | nC | TJ = 25°C, IF = 5.6A, VDD = 15V, di/dt = 100A/µs | 2 |
| Single Pulse Avalanche Energy | EAS |  |  | 180 | mJ | Starting TJ = 25°C, L = 12mH, RG = 25Ω, IAS = 5.6A | 2 |
| Avalanche Current | IAR |  |  | 5.6 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `IRF7493TRPBF`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `irf7493trpbf-etched.step` / `irf7493trpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7493trpbf.step` / `irf7493trpbf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586173248833007616) (9 pp, sha256 `bd22a5d30f2bc60f`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf7493trpbf-datasheet.pdf)